CONTACT RESISTANCE MEASUREMENTS FOR THE Ge2Sb2Te5 THIN FILMS

National Research University of Electronic Technology, Bld. 1, Shokin Square, Zelenograd, Moscow, 124498, Russia; A. YAKUBOV; A. SHERCHENKOV; P. LAZARENKO; A. BABICH; D. TEREKHOV; A. DEDKOVA

doi:10.15251/cl.2020.171.1

journal article·2020-01Open access

CONTACT RESISTANCE MEASUREMENTS FOR THE Ge2Sb2Te5 THIN FILMS

National Research University of Electronic Technology, Bld. 1, Shokin Square, Zelenograd, Moscow, 124498, Russia, A. YAKUBOV, A. SHERCHENKOV, P. LAZARENKO, A. BABICH, D. TEREKHOV, A. DEDKOVA

Chalcogenide Letters· Volume 17· Issue 1

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Source abstract

Abstract

In this study contact resistances between the Ge2Sb2Te5 thin films and TiN/W electrodes were investigated by the transmission line model method. The influence of the heat treatment on the electrical characteristics of the Ge2Sb2Te5/electrode was investigated. Heat treatment at 150 °C leads to a significant drop in contact resistance due to crystallization of the thin Ge2Sb2Te5 film. The contribution of the contact resistance to the total contact resistance of the Ge2Sb2Te5 and TiN/W contact was analyzed and showed that the contribution of the contact resistance to the total resistance sufficiently increases for the Ge2Sb2Te5 film in the crystalline state.

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Research context

Materials processing

OpenAlex topics: Phase-change materials and chalcogenides · Photonic and Optical Devices · Insect and Arachnid Ecology and Behavior

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