Structural and impedance analysis of tin-sulphide (SnS) nanoparticles produced with the help of hydrothermal process
Source abstract
Abstract
The three samples of SnS with different molarity 1ml, 0.5ml and 0.25ml were prepared by hydrothermal method. The prepared samples were characterized by XRD, SEM and impedance spectroscopies. XRD confirmed the cubic and orthorhombic structure of SnS. The average size of nanoparticles was noted to be about 12.77 nm, 16.43 nm and 16.44 nm at 140 °C. These nanoparticles were of cubic and orthorhombic forms. Average strain came out to be 0.215, 0.142 and 0.140. This result shows that by changing molarity, crystal structure of SnS can be changed. Crystallite size is increasing with decreasing molarity while strain is decreasing. Scanning electron microscopy (SEM) was carried out in order to study sheet like morphology of the samples. The carried-out process showed that the produced sample shows ball resembling spherical form. On the other hand, the frequency distribution and calculation of mean size of SnS nanoparticles, histogram and Gaussian curve were drawn and analyzed. Size range of nano-particles for sample 1ml, 0.5ml and 0.25ml was between (10 ̶65) nm, (20 ̶120) nm, (10 ̶90) nm, respectively. The real part of impedance Z’ got maximum value of 0.173 MΩ, 0.31 MΩ, and 0.40 MΩ at three different molarities. Maximum values of imaginary impedance observed were 0.053 MΩ (1ml), 0.112 MΩ (0.5ml) and 0.14 MΩ at different Debye relaxation peaks. The results show that reduction in the molarity increases the impedance and decreases the capacitance.
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OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Semiconductor materials and interfaces
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References (40)
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1. [1] Tariq, Ghulam Hasnain, Ghulam Asghar, M. Shahzad Shifa, M. Anis-Ur-Rehman, Physical Chemistry Chemical Physics 25, no. 46 (2023): 31726-31740; https://doi.org/10.1039/D3CP04332K10.1039/D3CP04332K ↗
2. [2] Messaoudi, Meriem, Leila Lamiri, Samah Boudour, Lynda Beddek, Optical and Quantum Electronics 56, no. 8 (2024): 1375; https://doi.org/10.1007/s11082-024-07216-710.1007/s11082-024-07216-7 ↗
3. [3] Tumram, Priya V., Renuka Nafdey, Pranay R. Kautkar, Materials Science and Engineering: B 307 (2024): 117504; https://doi.org/10.1016/j.mseb.2024.11750410.1016/j.mseb.2024.117504 ↗
4. [4] Li, Yang, Shisheng Zheng, Hao Liu, Nature Communications 15, no. 1 (2024): 176; https://doi.org/10.1038/s41467-023-44131-z10.1038/s41467-023-44131-z ↗
5. [5] Hegde, S. S., Prashantha Murahari, Brian Jeevan Fernandes, Journal of Alloys and Compounds 820 (2020): 153116; https://doi.org/10.1016/j.jallcom.2019.15311610.1016/j.jallcom.2019.153116 ↗
6. [6] I. Y. Ahmet, M. Guc, Y. Sánchez, M. Neuschitzer, V. Izquierdo-Roca, E. Saucedo, A. L. Johnson, RSC Adv., 9 (2019) 14899-14909; https://doi.org/10.1039/C9RA01938C10.1039/C9RA01938C ↗
7. [7] M. Devika, N. K. Reddy, M. Prashantha, K. Ramesh, S. V. Reddy, Y. B. Hahn, K. R. Gunasekhar, Phys. Status Solidi A, 207 (2010) 1864-1869; https://doi.org/10.1002/pssa.20092537910.1002/pssa.200925379 ↗
8. [8] Voznyi, Andrii, Volodymyr Kosyak, Yurii Yeromenko, Thin Solid Films 709 (2020): 138153; https://doi.org/10.1016/j.tsf.2020.13815310.1016/j.tsf.2020.138153 ↗
9. [9] Iguchi, Yuki, Koichi Sato, Kazutoshi Inoue, Solid State Sciences 140 (2023): 107206; https://doi.org/10.1016/j.solidstatesciences.2023.10720610.1016/j.solidstatesciences.2023.107206 ↗
10. [10] T. Ikuno, R. Suzuki, K. Kitazumi, N. Takahashi, N. Kato, K. Higuchi, Appl. Phys. Lett., 102 (2013) 193901; https://doi.org/10.1063/1.480460310.1063/1.4804603 ↗
11. [11] V. Steinmann, R. Jaramillo, K. Hartman, R. Chakraborty, R. E. Brandt, J. R. Poindexter, Y. S. Lee, L. Sun, A. Polizzotti, H. H. Park, R. G. Gordon, T. Buonassisi, Adv. Mater., 26 (2014) 7488-7492; https://doi.org/10.1002/adma.20140221910.1002/adma.201402219 ↗
12. [12] P. Sinsermsuksakul, L. Sun, S. W. Lee, H. H. Park, S. B. Kim, C. Yang, R. G. Gordon, Adv. Energy Mater., 4 (2014) 1400496; https://doi.org/10.1002/aenm.20140049610.1002/aenm.201400496 ↗
13. [13] J. A. Andrade-Arvizu, M. Courel-Piedrahita, O. Vigil-Galán, J. Mater. Sci. Mater. Electron., 26 (2015) 4541-4556; https://doi.org/10.1007/s10854-015-3050-z10.1007/s10854-015-3050-z ↗
14. [14] Banotra, Arun, Naresh Padha. Journal of Crystal Growth 534 (2020): 125460; https://doi.org/10.1016/j.jcrysgro.2019.12546010.1016/j.jcrysgro.2019.125460 ↗
15. [15] Ichimura M, Takeuchi K, Ono Y, Arai E. Thin Solid Films 2000;98:361-8; https://doi.org/10.1016/S0040-6090(99)00798-110.1016/S0040-6090(99)00798-1 ↗
16. [16] Sebastian, S., I. Kulandaisamy, S. Valanarasu, Mohd Shkir, V. Ganesh, I. S. Yahia, HyunSeok Kim, Dhanasekaran Vikraman, Surface Engineering 37, no. 2 (2021): 137-147; https://doi.org/10.1080/02670844.2020.1754623 94310.1080/02670844.2020.1754623 ↗
17. [17] Pramanik P, Basu PK, Biswas S. Thin Solid Films 1987;150:269-76; https://doi.org/10.1016/0040-6090(87)90099-X10.1016/0040-6090(87)90099-X ↗
18. [18] Thangaraju B, Kaliannan P. J Phys D Appl Phys 2000;33:1054-9; https://doi.org/10.1088/0022-3727/33/9/30410.1088/0022-3727/33/9/304 ↗
19. [19] Ortiz A, Alonso JC, Garcia M, Toriz J. Semicond Sci Technol 1996;11:243-7; https://doi.org/10.1088/0268-1242/11/2/01710.1088/0268-1242/11/2/017 ↗
20. [20] Price LS, Parkin IP, Hardy AME, Clark RJH, Hibbert TG, Molloy KC. Chem Mater 1999;11:1792-9; https://doi.org/10.1021/cm990005z10.1021/cm990005z ↗
21. [21] Xiao ZL, Han CY, Kwok WK, Wang HH, Welp U, Wang J, et al. J Am Chem Soc 2004;126:2316-7; https://doi.org/10.1021/ja031515410.1021/ja0315154 ↗
22. [22] Zhu H, Yang D, Zhang H. Mater Lett 2006;60:2686-9; https://doi.org/10.1016/j.matlet.2006.01.06510.1016/j.matlet.2006.01.065 ↗
23. [23] Panda SK, Gorai S, Chaudhuri S. Mater Sci Eng B 2006;129:265-9; https://doi.org/10.1016/j.mseb.2005.12.01410.1016/j.mseb.2005.12.014 ↗
24. [24] Peng H, Jiang L, Huang J, Li G. J Nanopart Res 2007;9:1163-5; https://doi.org/10.1007/s11051-006-9208-010.1007/s11051-006-9208-0 ↗
25. [25] Liu Y, Hou D, Wang G. Chem Phys Lett 2003;379:67-73; https://doi.org/10.1016/j.cplett.2003.08.01410.1016/j.cplett.2003.08.014 ↗
26. [26] Chen D, Shen G, Tang K, Lei S, Zheng H, Qian Y. J Cryst Growth 2004;260:469-74; https://doi.org/10.1016/j.jcrysgro.2003.09.00910.1016/j.jcrysgro.2003.09.009 ↗
27. [27] Zhu H, Yang D, Ji Y, Zhang H, Shen XJ. Mater Sci 2005;40:591-5; https://doi.org/10.1007/s10853-005-6293-x10.1007/s10853-005-6293-x ↗
28. [28] Salavati- Niasari M, Ghanbari D, Davar F. J Alloy Comp 2010;492:570-5; https://doi.org/10.1016/j.jallcom.2009.11.18310.1016/j.jallcom.2009.11.183 ↗
29. [29] Kang JG, Ko YD, Choi KJ, Park JG, Kim DW. Appl Phys A 2010.
30. [30] Reghima M, Akkari A, Guasch C, Turki-Kamoun N (2015), J Appl Phys 7:023128; https://doi.org/10.1063/1.491874010.1063/1.4918740 ↗
31. [31] Cullity B (1967) Elements of X-ray diffraction. AddisionWesley publishing company Inc, New york, p 501
32. [32] Kuznetsov AY, Machado R, Gomes LS, Achete CA, Swamy V, Muddle BC, Prakapenka V (2009), Appl Phys Lett 94:193117; https://doi.org/10.1063/1.313907810.1063/1.3139078 ↗
33. [33] Hasan BA, Shallal IH (2014), J Nano Adv Mater 2:43-49; https://doi.org/10.12785/jnam/02020110.12785/jnam/020201 ↗
34. [34] Jakhar A, Jamdagni A, Bakshi A, Verma T, Shukla V (2013), Solid State Commun 168:31- 35; https://doi.org/10.1016/j.ssc.2013.06.01310.1016/j.ssc.2013.06.013 ↗
35. [35] Manohari AG, Dhanapandian S, Manoharan C, Kumar KS, Maralinga T (2014), Mater Sci Semicond Process 17:138-142; https://doi.org/10.1016/j.mssp.2013.09.01210.1016/j.mssp.2013.09.012 ↗
36. [36] Ahmad SM, Latif LA, Salim AK (2011), J Basrah Res Sci 37:54-59
37. [37] Guneri E, Gode F, Ulutas C, Kirmizigul F, Altindemir G (2010), Chalcogenide Lett 7:685- 694
38. [38] Kumar KS, Manoharan C, Dhanapandian S, Manohari AG (2013), Mol Biol Spectrosc 115:840-844; https://doi.org/10.1016/j.saa.2013.06.11210.1016/j.saa.2013.06.112 ↗
39. [39] Jayasree J, Chalapathi U, Raja VS (2013), Thin Solid Films 537:149-155; https://doi.org/10.1016/j.tsf.2013.03.01310.1016/j.tsf.2013.03.013 ↗
40. [40] Azam A, Ahmed AS, Ansari MS, Shafeeq M, Naqvi AH (2010), J Alloys Compd 506:237- 242; https://doi.org/10.1016/j.jallcom.2010.06.18410.1016/j.jallcom.2010.06.184 ↗