Combinatorial Growth and Anisotropy Control of Self-Assembled Epitaxial Ultrathin Alloy Nanowires

Self-assembled vertical epitaxial nanostructures form a new class of heterostructured materials that has emerged in recent years. Interestingly, such kind of architectures can be grown using combinatorial processes, implying sequential deposition of distinct materials. Although opening many perspectives, this combinatorial nature has not been fully exploited yet. This work demonstrates that the combinatorial character of the growth can be further exploited in order to obtain alloy nanowires coherently embedded in a matrix. This issue is illustrated in the case of a fully epitaxial system: CoxNi1-x nanowires in CeO2/SrTiO3(001). The advantage brought by the ability to grow alloys is illustrated by the control of the magnetic anisotropy of the nanowires when passing from pure Ni wires to CoxNi1-x alloys. Further exploitation of this combinatorial approach may pave the way toward full three-dimensional heteroepitaxial architectures through axial structuring of the wires.