Effect of substrate temperature on physical properties of Co doped SnS2 thin films deposited by ultrasonic spray pyrolysis

Ultrasonic Spray Pyrolysis (USP) was used to deposited Co doped SnS2 thin films on a glass substrate at different substrate temperatures (Ts = 350 °C, 375 °C, 400 °C, and 425 °C). DRX patterns shows that the synthesized films revealed a pure SnS2 phase with hexagonal structure. The mean crystalline grain sizes were showed an increasing– decreasing trend between 15.67 and 29.84 nm with an increment in the substrate temperature. The SEM images were significantly affected by the substrate temperature. Also, the optical band gap increases from 2.62 to 3.00 eV with the substrate temperatures increasing. Hall Effect measurements confirm the n-type conductivity of the as-deposited films. Furthermore, the films resistivity varies between 117 Ω.cm to 0.20 Ω.cm, as the substrate temperature increases from 350 to 425 °C.