journal article·2014-06-24Open access

Imaging and Tuning Molecular Levels at the Surface of a Gated Graphene Device

Alexander Riss, Sebastian Wickenburg, Liang Z. Tan, Hsin-Zon Tsai, Youngkyou Kim, Jiong Lu, Aaron J. Bradley, Miguel M. Ugeda, Kacey L. Meaker, Kenji Watanabe, Takashi Taniguchi, Alex Zettl, Felix R. Fischer, Steven G. Louie, Michael F. Crommie

ACS Nano· Volume 8· Issue 6

Abstract

Gate-controlled tuning of the charge carrier density in graphene devices provides new opportunities to control the behavior of molecular adsorbates. We have used scanning tunneling microscopy (STM) and spectroscopy (STS) to show how the vibronic electronic levels of 1,3,5-tris(2,2-dicyanovinyl)benzene molecules adsorbed onto a graphene/BN/SiO2 device can be tuned via application of a backgate voltage. The molecules are observed to electronically decouple from the graphene layer, giving rise to well-resolved vibronic states in dI/dV spectroscopy at the single-molecule level. Density functional theory (DFT) and many-body spectral function calculations show that these states arise from molecular orbitals coupled strongly to carbon-hydrogen rocking modes. Application of a back-gate voltage allows switching between different electronic states of the molecules for fixed sample bias.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Molecular Junctions and Nanostructures · Graphene research and applications · Quantum and electron transport phenomena

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore

Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore

Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan

Kavli Energy NanoSciences Institute, University of California and the Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

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