Copper telluride thin films for gas sensing applications
Source abstract
Abstract
Copper Telluride Thin films of thickness 700nm and 900nm, prepared thin films using thermal evaporation on cleaned Si substrates kept at 300K under the vacuum about (4x10-5 ) mbar. The XRD analysis and (AFM) measurements use to study structure properties. The sensitivity (S) of the fabricated sensors to NO2 and H2 was measured at room temperature. The experimental relationship between S and thickness of the sensitive film was investigated, and higher S values were recorded for thicker sensors. Results showed that the best sensitivity was attributed to the Cu2Te film of 900 nm thickness at the H2 gas.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Gas Sensing Nanomaterials and Sensors · ZnO doping and properties
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References (18)
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