journal article·2017-12-26

Nano-electromechanical Switch Based on a Physical Unclonable Function for Highly Robust and Stable Performance in Harsh Environments

Kyu-Man Hwang, Jun-Young Park, Hagyoul Bae, Seung-Wook Lee, Choong-Ki Kim, Myungsoo Seo, Hwon Im, Do-Hyun Kim, Seong-Yeon Kim, Geon-Beom Lee, Yang-Kyu Choi

ACS Nano· Volume 11· Issue 12
Publisher page

Abstract

A physical unclonable function (PUF) device using a nano-electromechanical (NEM) switch was demonstrated. The most important feature of the NEM-switch-based PUF is its use of stiction. Stiction is one of the chronic problems associated with micro- and nano-electromechanical system (MEMS/NEMS) devices; however, here, it was utilized to intentionally implement a PUF for hardware-based security. The stiction is caused by capillary and van der Waals forces, producing strong adhesion, which can be utilized to design a highly robust and stable PUF. The probability that stiction will occur on either of two gates in the NEM switch is the same, and consequently, the occurrence of the stiction is random and unique, which is critical to its PUF performance. This uniqueness was evaluated by measuring the interchip Hamming distance (interchip HD), which characterizes how different responses are made when the same challenge is applied. Uniformity was also evaluated by the proportion of "1" or "0" in the response bit-string. The reliability of the proposed PUF device was assessed by stress tests under harsh environments such as high temperature, high dose radiation, and microwaves.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Physical Unclonable Functions (PUFs) and Hardware Security · Integrated Circuits and Semiconductor Failure Analysis · Neuroscience and Neural Engineering

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Electrical Engineering, 291 Daehak-ro, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea

Semiconductor R&D Center, Samsung Electronics, Hwasung 18448, Korea

System LSI Division, Samsung Electronics, Samsung-ro 1, Yongin-City, Gyeonggi-do, Korea

SK Hynix Inc., 2091 Gyeongchung-daero, Bubal-eub, Icheon-si, Gyeonggi-do, Korea

Funding

National Research Foundation of Korea · Ministry of Science, ICT and Future Planning

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