Enhancing sputtered GaN/Si film quality by adding AlGaN buffer layer in a continuous deposition process
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OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Semiconductor materials and devices
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References (22)
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18. Optimal Growth Conditions for Forming c-Axis (002) Aluminum Nitride Thin Films as a Buffer Layer for Hexagonal Gallium Nitride Thin Films Produced with In Situ Continual Radio Frequency Sputtering10.3390/mi13091546 ↗
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