STRUCTURE OF Ge2Sb2Te5 THIN FILMS NEAR THE INFLECTION POINT OF THE RESISTIVITY TEMPERATURE DEPENDENCE

National Research University of Electronic Technology, Zelenograd 124498, Russia, Y. ZAYTSEVA, P. LAZARENKO, National Research University of Electronic Technology, Zelenograd 124498, Russia, YU. VOROBYOV, bRyazan State Radio Engineering University, Ryazan 390005, Russia, A. YAKUBOV, National Research University of Electronic Technology, Zelenograd 124498, Russia, N. BORGARDT, National Research University of Electronic Technology, Zelenograd 124498, Russia, S. KOZYUKHIN, Kurnakov Institute of General and Inorganic Chemistry, RAS, Moscow 119991, Russia, A. SHERCHENKOV, National Research University of Electronic Technology, Zelenograd 124498, Russia