Effect of electric field on the wetting behavior of GaInSnBiZn high-entropy alloy in NaOH aqueous solution

The GaInSnBiZn low-melting-point high-entropy alloy exhibits promising prospects for utilization in the realm of flexible electronic devices, offering a promising alternative to common binary or ternary room-temperature liquid metals . By utilizing the sessile drop method , the wetting behavior of GaInSnBiZn/SiO2 was investigated, focusing on the effects of applied voltage and NaOH solution concentration. It was revealed that the alloy's electro-wetting is primarily influenced by the generation and dissolution of the surface oxide layer , as well as the interaction of the electric double-layer effect. The optimal response voltages for achieving the fastest wetting rate were found to be 16 V, 10 V, 18 V, and 8 V in 0.5 mol/L, 1.0 mol/L, 1.5 mol/L, and 2.0 mol/L concentrations, respectively, with 18 V at 1.5 mol/L concentration identified as the optimal process selection. The spreading behavior of the alloy in low-concentration NaOH solutions followed Tanner's Law, while in the 2.0 mol/L concentration, significant repellence and wetting angle saturation were observed. The wetting process of the alloy at various stages was described using the power-law equation R = at c , while the wetting mechanism of the alloy was elucidated through the application of the Lippmann equation and the electric double-layer effect equation.