Atomic-Scale Visualization of Initial Growth of Homoepitaxial SrTiO3 Thin Film on an Atomically Ordered Substrate
Source abstract
Abstract
The initial homoepitaxial growth of SrTiO(3) on a (√13 × √13)-R33.7° SrTiO(3)(001) substrate surface, which can be prepared under oxide growth conditions, is atomically resolved by scanning tunneling microscopy. The identical (√13 × √13) atomic structure is clearly visualized on the deposited SrTiO(3) film surface as well as on the substrate. This result indicates the transfer of the topmost Ti-rich (√13 × √13) structure to the film surface and atomic-scale coherent epitaxy at the film/substrate interface. Such atomically ordered SrTiO(3) substrates can be applied to the fabrication of atom-by-atom controlled oxide epitaxial films and heterostructures.
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Research context
OpenAlex topics: Electronic and Structural Properties of Oxides · Semiconductor materials and devices · Magnetic and transport properties of perovskites and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
WPI-Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
Department of Chemistry, The University of Tokyo, Tokyo 113-0033, Japan
Central Research Laboratory, Hitachi, Ltd., Saitama 350-0395, Japan
Department of Physics, Tokyo Institute of Technology, Tokyo 152-8551, Japan
PRESTO, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan
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