journal article·2017-01-24

Microsteganography on WS2 Monolayers Tailored by Direct Laser Painting

Ashwin Venkatakrishnan, Hou Chua, Pinxi Tan, Zhenliang Hu, Hongwei Liu, Yanpeng Liu, Alexandra Carvalho, Junpeng Lu, Chorng Haur Sow

ACS Nano· Volume 11· Issue 1
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Abstract

We present scanning focused laser beam as a multipurpose tool to engineer the physical and chemical properties of WS 2 microflakes. For monolayers, the laser modification integrates oxygen into the WS 2 microflake, resulting in ∼9 times enhancement in the intensity of the fluorescence emission. This modification does not cause any morphology change, allowing “micro-encryption” of information that is only observable as fluorescence under excitation. The same focused laser also facilitates on demand thinning down of WS 2 multilayers into monolayers, turning them into fluorescence active components. With a scanning focused laser beam, micropatterns are readily created on WS 2 multilayers through selective thinning of specific regions on the flake.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Energy Harvesting in Wireless Networks

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

NUS High School of Mathematics and Science, 20 Clementi Avenue 1, Singapore 129957

Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542

Institute of Materials Research and Engineering, Agency for Science, Technology, and Research (A*STAR), 2 Fusionopolis Way, lnnovis, #08-03, Singapore 138634

Center for Advanced 2D Materials and Graphene Research Center, National University of Singapore, 6 Science Drive 3, Singapore 117546

Funding

Ministry of Education - Singapore

References (32)

Show source-provided references
1. 10.1364/OE.23.02005110.1364/OE.23.020051 ↗
2. 10.1038/nnano.2013.15110.1038/nnano.2013.151 ↗
3. 10.1038/nnano.2012.9510.1038/nnano.2012.95 ↗
4. 10.1038/nnano.2012.9610.1038/nnano.2012.96 ↗
5. 10.1038/ncomms188210.1038/ncomms1882 ↗
6. 10.1038/nnano.2014.2610.1038/nnano.2014.26 ↗
7. 10.1038/nnano.2014.1410.1038/nnano.2014.14 ↗
8. 10.1038/nnano.2014.2510.1038/nnano.2014.25 ↗
9. 10.1021/nn501821z10.1021/nn501821z ↗
10. 10.1038/nnano.2013.27710.1038/nnano.2013.277 ↗
11. 10.1021/nl302635710.1021/nl3026357 ↗
12. 10.1038/nphoton.2015.19710.1038/nphoton.2015.197 ↗
13. 10.1021/acs.nanolett.5b0406610.1021/acs.nanolett.5b04066 ↗
14. 10.1021/nn502362b10.1021/nn502362b ↗
15. 10.1039/C4NR03334E10.1039/C4NR03334E ↗
16. 10.1126/science.aad211410.1126/science.aad2114 ↗
17. 10.1021/acs.nanolett.6b0053610.1021/acs.nanolett.6b00536 ↗
18. 10.1021/acs.nanolett.6b0147510.1021/acs.nanolett.6b01475 ↗
19. 10.1038/srep1637410.1038/srep16374 ↗
20. 10.1021/acs.nanolett.6b0211110.1021/acs.nanolett.6b02111 ↗
21. 10.1038/srep0175510.1038/srep01755 ↗
22. 10.1021/acsnano.5b0721410.1021/acsnano.5b07214 ↗
23. 10.1038/srep0265710.1038/srep02657 ↗
24. 10.1038/nphys332410.1038/nphys3324 ↗
25. 10.1103/PhysRevB.90.07541310.1103/PhysRevB.90.075413 ↗
26. 10.1021/nn507349510.1021/nn5073495 ↗
27. 10.1103/PhysRevB.88.11520510.1103/PhysRevB.88.115205 ↗
28. 10.1038/ncomms554310.1038/ncomms5543 ↗
29. 10.3390/photonics201028810.3390/photonics2010288 ↗
30. 10.1021/acs.nanolett.5b0095210.1021/acs.nanolett.5b00952 ↗
31. 10.1103/PhysRevLett.56.93010.1103/PhysRevLett.56.930 ↗
32. 10.1021/jp200044210.1021/jp2000442 ↗