journal article·2018-09-25

Oxygen-Promoted Chemical Vapor Deposition of Graphene on Copper: A Combined Modeling and Experimental Study

Bharathi Madurai Srinivasan, Yufeng Hao, Ramanarayan Hariharaputran, Shanti Rywkin, James C. Hone, Luigi Colombo, Rodney S. Ruoff, Yong-Wei Zhang

ACS Nano· Volume 12· Issue 9
Publisher page

Abstract

Mass production of large, high-quality single-crystalline graphene is dependent on a complex coupling of factors including substrate material, temperature, pressure, gas flow, and the concentration of carbon and hydrogen species. Recent studies have shown that the oxidation of the substrate surface such as Cu before the introduction of the C precursor, methane, results in a significant increase in the growth rate of graphene while the number of nuclei on the surface of the Cu substrate decreases. We report on a phase-field model, where we include the effects of oxygen on the number of nuclei, the energetics at the growth front, and the graphene island morphology on Cu. Our calculations reproduce the experimental observations, thus validating the proposed model. Finally, and more importantly, we present growth rate from our model as a function of O concentration and precursor flux to guide the efficient growth of large single-crystal graphene of high quality.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Graphene research and applications · Semiconductor materials and devices · Radiation Effects in Electronics

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of High Performance Computing, A*STAR, Singapore 138632, Singapore

National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

Department of Science, Borough of Manhattan Community College, The City University of New York, New York, New York 10007, United States

Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States

Texas Instruments, Dallas, Texas 75243, United States

Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan National Institute of Science and Technology, Ulsan 689-798, Korea

Funding

Ministry of Science and Technology of the People's Republic of China · Semiconductor Research Corporation · National Natural Science Foundation of China · Science and Engineering Research Council · Central Committee of the Communist Party of China

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