journal article·2024-09

Atomic and electronic properties of the metal/diamond (100) interfaces by first-principles calculations

Chunmin Cheng, Xiang Sun, Xiaofei He, Erqi Xu, Qijun Wang, Ruyue Cao, Wei Shen, Fang Dong, Yuzheng Guo, Zhaofu Zhang, Sheng Liu

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Electronic and Structural Properties of Oxides · Diamond and Carbon-based Materials Research · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (50)

Show source-provided references
1. Ultrawide-bandgap semiconductors: research opportunities and challenges
2. High carrier mobility in single-crystal plasma-deposited diamond10.1126/science.1074374 ↗
3. Extreme dielectric strength in boron doped homoepitaxial diamond10.1063/1.3520140 ↗
4. Superconductivity in diamond10.1038/nature02449 ↗
5. Heat and radiation resistances of diamond semiconductor in gamma-ray detection10.7567/1347-4065/ab4044 ↗
6. Ultrashallow TiC source/drain contacts in diamond MOSFETs formed by hydrogenation-last approach10.1109/TED.2010.2043311 ↗
7. Schottky barrier height and thermal stability of p-diamond (100) Schottky interfaces10.1016/j.tsf.2013.11.132 ↗
8. High-preformance diamond surface-channel field-effect transistors and their operation mechanism10.1016/S0925-9635(98)00449-X ↗
9. C-Si interface on SiO2/(111) diamond p-MOSFETs with high mobility and excellent normally-off operation10.1016/j.apsusc.2022.153368 ↗
10. Growth behavior of CVD diamond films with enhanced electron field emission properties over a wide range of experimental parameters10.1016/j.jmst.2018.04.021 ↗
11. Metal-semiconductor contacts: electronic properties10.1016/0039-6028(94)90707-2 ↗
12. On the physics of metal-semiconductor interfaces10.1088/0034-4885/53/3/001 ↗
13. Contacts between two- and three-dimensional materials: ohmic, Schottky, and p-n heterojunctions10.1021/acsnano.6b01842 ↗
14. Photonic devices fabricated from (111)-oriented single crystal diamond10.1002/inf2.12090 ↗
15. Schottky barrier height engineering for electrical contacts of multilayered MoS2 transistors with reduction of metal-induced gap states10.1021/acsnano.8b03331 ↗
16. Interface and surface engineering of black phosphorus: a review for optoelectronic and photonic applications10.1088/2752-5724/ac49e3 ↗
17. Band offsets of wide-band-gap oxides and implications for future electronic devices10.1116/1.591472 ↗
18. Reduced fermi level pinning at physisorptive sites of moire-MoS2/metal Schottky barriers10.1021/acsami.1c23918 ↗
19. Schottky barrier heights of defect-free metal/ZnO, CdO, MgO, and SrO interfaces10.1063/5.0047447 ↗
20. Role of virtual gap states and defects in metal-semiconductor contacts10.1103/PhysRevLett.58.1260 ↗
21. Extending the metal-induced gap state model of Schottky barriers10.1116/6.0000164 ↗
22. Origin of Schottky barrier modification by hydrogen on diamond10.1143/JJAP.48.111602 ↗
23. An assessment of contact metallization for high power and high temperature diamond Schottky devices10.1016/j.diamond.2012.05.007 ↗
24. Band offsets, Schottky barrier heights, and their effects on electronic devices10.1116/1.4818426 ↗
25. Preparation of H-terminated and aminated diamond like carbon surfaces10.1007/s12598-012-0489-4 ↗
26. Reconstruction of (100) diamond surfaces using molecular dynamics with combined quantum and empirical forces10.1103/PhysRevB.49.5662 ↗
27. Electrical properties of a Schottky barrier formed on a homoepitaxially grown diamond (001) film10.1016/0925-9635(95)00372-X ↗
28. Ab-initio study of Schottky barrier heights at metal-diamond (1 1 1) interfaces10.1016/j.apsusc.2023.156329 ↗
29. Electronic structures of metal/H-diamond (111) interfaces by ab-initio studies10.1088/1361-6463/ad529b ↗
30. Schottky barrier height at metal/ZnO interface: a first-principles study10.1016/j.mee.2019.111056 ↗
31. Origin of weaker fermi level pinning and localized interface states at metal silicide schottky barriers10.1021/acs.jpcc.0c06228 ↗
32. The work function of the elements and its periodicity10.1063/1.323539 ↗
33. Ab initio studies of diamond(100) surface reconstruction10.1103/PhysRevB.50.2598 ↗
34. Theory of metal surfaces: work function10.1103/PhysRevB.3.1215 ↗
35. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set10.1103/PhysRevB.54.11169 ↗
36. From ultrasoft pseudopotentials to the projector augmented-wave method10.1103/PhysRevB.59.1758 ↗
37. Generalized gradient approximation made simple10.1103/PhysRevLett.77.3865 ↗
38. VASPKIT: a user-friendly interface facilitating high-throughput computing and analysis using VASP code10.1016/j.cpc.2021.108033 ↗
39. A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu10.1063/1.3382344 ↗
40. Stability, reconstruction, and electronic properties of diamond (100) and (111) surfaces10.1103/PhysRevB.48.18189 ↗
41. Dimer reconstruction and electronic surface states on clean and hydrogenated diamond (100) surfaces10.1103/PhysRevB.53.7334 ↗
42. Dispersions of surface states on diamond (100) and (111)10.1103/PhysRevB.55.10841 ↗
43. Electron affinity of boron-terminated diamond (001) surfaces: a density functional theory study10.1039/C9TC02517K ↗
44. The role of hydrogen plasma power on surface roughness and carrier transport in transfer-doped H-diamond10.1016/j.diamond.2018.03.005 ↗
45. Surface cleaning, electronic states and electron affinity of diamond (100), (111) and (110) surfaces10.1016/S0039-6028(98)00259-3 ↗
46. Electron affinity of plasma-hydrogenated and chemically oxidized diamond (100) surfaces10.1103/PhysRevB.64.165411 ↗
47. Effect of surface hydrogen on metal-diamond interface properties10.1063/1.353322 ↗
48. Precise determination of the valence-band edge in X-ray photoemission spectra - application to measurement of semiconductor interface potentials10.1103/PhysRevLett.44.1620 ↗
49. Dielectric constant of diamond10.1038/161729a0 ↗
50. Hydrogen-terminated diamond surfaces and interfaces10.1016/S0167-5729(97)80002-7 ↗