Atomic and electronic properties of the metal/diamond (100) interfaces by first-principles calculations
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OpenAlex topics: Electronic and Structural Properties of Oxides · Diamond and Carbon-based Materials Research · Semiconductor materials and devices
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References (50)
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1. Ultrawide-bandgap semiconductors: research opportunities and challenges
2. High carrier mobility in single-crystal plasma-deposited diamond10.1126/science.1074374 ↗
3. Extreme dielectric strength in boron doped homoepitaxial diamond10.1063/1.3520140 ↗
4. Superconductivity in diamond10.1038/nature02449 ↗
5. Heat and radiation resistances of diamond semiconductor in gamma-ray detection10.7567/1347-4065/ab4044 ↗
6. Ultrashallow TiC source/drain contacts in diamond MOSFETs formed by hydrogenation-last approach10.1109/TED.2010.2043311 ↗
7. Schottky barrier height and thermal stability of p-diamond (100) Schottky interfaces10.1016/j.tsf.2013.11.132 ↗
8. High-preformance diamond surface-channel field-effect transistors and their operation mechanism10.1016/S0925-9635(98)00449-X ↗
9. C-Si interface on SiO2/(111) diamond p-MOSFETs with high mobility and excellent normally-off operation10.1016/j.apsusc.2022.153368 ↗
10. Growth behavior of CVD diamond films with enhanced electron field emission properties over a wide range of experimental parameters10.1016/j.jmst.2018.04.021 ↗
11. Metal-semiconductor contacts: electronic properties10.1016/0039-6028(94)90707-2 ↗
12. On the physics of metal-semiconductor interfaces10.1088/0034-4885/53/3/001 ↗
13. Contacts between two- and three-dimensional materials: ohmic, Schottky, and p-n heterojunctions10.1021/acsnano.6b01842 ↗
14. Photonic devices fabricated from (111)-oriented single crystal diamond10.1002/inf2.12090 ↗
15. Schottky barrier height engineering for electrical contacts of multilayered MoS2 transistors with reduction of metal-induced gap states10.1021/acsnano.8b03331 ↗
16. Interface and surface engineering of black phosphorus: a review for optoelectronic and photonic applications10.1088/2752-5724/ac49e3 ↗
17. Band offsets of wide-band-gap oxides and implications for future electronic devices10.1116/1.591472 ↗
18. Reduced fermi level pinning at physisorptive sites of moire-MoS2/metal Schottky barriers10.1021/acsami.1c23918 ↗
19. Schottky barrier heights of defect-free metal/ZnO, CdO, MgO, and SrO interfaces10.1063/5.0047447 ↗
20. Role of virtual gap states and defects in metal-semiconductor contacts10.1103/PhysRevLett.58.1260 ↗
21. Extending the metal-induced gap state model of Schottky barriers10.1116/6.0000164 ↗
22. Origin of Schottky barrier modification by hydrogen on diamond10.1143/JJAP.48.111602 ↗
23. An assessment of contact metallization for high power and high temperature diamond Schottky devices10.1016/j.diamond.2012.05.007 ↗
24. Band offsets, Schottky barrier heights, and their effects on electronic devices10.1116/1.4818426 ↗
25. Preparation of H-terminated and aminated diamond like carbon surfaces10.1007/s12598-012-0489-4 ↗
26. Reconstruction of (100) diamond surfaces using molecular dynamics with combined quantum and empirical forces10.1103/PhysRevB.49.5662 ↗
27. Electrical properties of a Schottky barrier formed on a homoepitaxially grown diamond (001) film10.1016/0925-9635(95)00372-X ↗
28. Ab-initio study of Schottky barrier heights at metal-diamond (1 1 1) interfaces10.1016/j.apsusc.2023.156329 ↗
29. Electronic structures of metal/H-diamond (111) interfaces by ab-initio studies10.1088/1361-6463/ad529b ↗
30. Schottky barrier height at metal/ZnO interface: a first-principles study10.1016/j.mee.2019.111056 ↗
31. Origin of weaker fermi level pinning and localized interface states at metal silicide schottky barriers10.1021/acs.jpcc.0c06228 ↗
32. The work function of the elements and its periodicity10.1063/1.323539 ↗
33. Ab initio studies of diamond(100) surface reconstruction10.1103/PhysRevB.50.2598 ↗
34. Theory of metal surfaces: work function10.1103/PhysRevB.3.1215 ↗
35. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set10.1103/PhysRevB.54.11169 ↗
36. From ultrasoft pseudopotentials to the projector augmented-wave method10.1103/PhysRevB.59.1758 ↗
37. Generalized gradient approximation made simple10.1103/PhysRevLett.77.3865 ↗
38. VASPKIT: a user-friendly interface facilitating high-throughput computing and analysis using VASP code10.1016/j.cpc.2021.108033 ↗
39. A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu10.1063/1.3382344 ↗
40. Stability, reconstruction, and electronic properties of diamond (100) and (111) surfaces10.1103/PhysRevB.48.18189 ↗
41. Dimer reconstruction and electronic surface states on clean and hydrogenated diamond (100) surfaces10.1103/PhysRevB.53.7334 ↗
42. Dispersions of surface states on diamond (100) and (111)10.1103/PhysRevB.55.10841 ↗
43. Electron affinity of boron-terminated diamond (001) surfaces: a density functional theory study10.1039/C9TC02517K ↗
44. The role of hydrogen plasma power on surface roughness and carrier transport in transfer-doped H-diamond10.1016/j.diamond.2018.03.005 ↗
45. Surface cleaning, electronic states and electron affinity of diamond (100), (111) and (110) surfaces10.1016/S0039-6028(98)00259-3 ↗
46. Electron affinity of plasma-hydrogenated and chemically oxidized diamond (100) surfaces10.1103/PhysRevB.64.165411 ↗
47. Effect of surface hydrogen on metal-diamond interface properties10.1063/1.353322 ↗
48. Precise determination of the valence-band edge in X-ray photoemission spectra - application to measurement of semiconductor interface potentials10.1103/PhysRevLett.44.1620 ↗
49. Dielectric constant of diamond10.1038/161729a0 ↗
50. Hydrogen-terminated diamond surfaces and interfaces10.1016/S0167-5729(97)80002-7 ↗