INFLUENCE OF Mn ON STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF Cu2(Zn1-xMnx)SnS4 THIN FILMS DEPOSITED BY SPRAY PYROLYSIS
Source abstract
Abstract
Cu2Zn1-xMnxSnS4 thin films were deposited onto glass substrates by spray pyrolysis method. They were characterized by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS) and UV-Visible spectroscopy and the four point probe techniques in order to study the effect of Mn on structural, optical and electrical properties of the samples. Definite x variable like ratio [Mn]/([Zn] + [Mn]) has been taken equal to 0, 0.2, 0.4, 0.6, 0.8 and 1. XRD and EDS analysis revealed the substitution of Mn in Zn sites. Cu2MnSn3S8 compound has appeared as a secondary phase in the films deposited with x ≥ 0.6. Optical band gap of the films increased from 1.34 to 1.68 eV with the increasing x value in the films deposited with (0.4 ≤ x ≤ 1). The resistivity decreases from 1.89 to 0.36 × 10-2 Ω.cm as a result of Sn amount in the film.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Gas Sensing Nanomaterials and Sensors · Semiconductor materials and interfaces
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