journal article·2009-05-26

Composition-Tuned ConSi Nanowires: Location-Selective Simultaneous Growth along Temperature Gradient

Kwanyong Seo, Sunghun Lee, Hana Yoon, Juneho In, Kumar S. K. Varadwaj, Younghun Jo, Myung-Hwa Jung, Jinhee Kim, Bongsoo Kim

ACS Nano· Volume 3· Issue 5
Publisher page

Abstract

We report the simultaneous and selective synthesis of single-crystalline Co(n)Si NWs (n = 1-3) and their corresponding crystal structures--simple cubic (CoSi), orthorhombic (Co(2)Si), and face-centered cubic (Co(3)Si)--following a composition change. Co(n)Si NWs were synthesized by placing the sapphire substrates along a temperature gradient. The synthetic process is a successful demonstration of tuning the chemical composition in Co(n)Si NWs. The synthesis and detailed crystal structure of single-crystalline Co(2)Si and Co(3)Si are reported for the first time including the bulk and the nanostructure phases. The electrical and magnetic properties of Co(2)Si NWs are investigated and compared with those of CoSi NWs.
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Research context

OpenAlex topics: Heusler alloys: electronic and magnetic properties · Chalcogenide Semiconductor Thin Films · Semiconductor materials and interfaces

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Chemistry, KAIST, Daejeon 305-701, Korea

Quantum Material Research Team, KBSI, Daejeon 305-333, Korea

Department of Physics, Sogang University, Seoul 121-742, Korea

Center for Nanoscience and Quantum Metrology, KRISS, Daejeon 305-600, Korea

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