Composition-Tuned ConSi Nanowires: Location-Selective Simultaneous Growth along Temperature Gradient
Source abstract
Abstract
We report the simultaneous and selective synthesis of single-crystalline Co(n)Si NWs (n = 1-3) and their corresponding crystal structures--simple cubic (CoSi), orthorhombic (Co(2)Si), and face-centered cubic (Co(3)Si)--following a composition change. Co(n)Si NWs were synthesized by placing the sapphire substrates along a temperature gradient. The synthetic process is a successful demonstration of tuning the chemical composition in Co(n)Si NWs. The synthesis and detailed crystal structure of single-crystalline Co(2)Si and Co(3)Si are reported for the first time including the bulk and the nanostructure phases. The electrical and magnetic properties of Co(2)Si NWs are investigated and compared with those of CoSi NWs.
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Research context
OpenAlex topics: Heusler alloys: electronic and magnetic properties · Chalcogenide Semiconductor Thin Films · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Chemistry, KAIST, Daejeon 305-701, Korea
Quantum Material Research Team, KBSI, Daejeon 305-333, Korea
Department of Physics, Sogang University, Seoul 121-742, Korea
Center for Nanoscience and Quantum Metrology, KRISS, Daejeon 305-600, Korea
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