journal article·2024-11-01Open access

Zinc sulfide thin films produced by spray pyrolysis: optical and structural characteristics

Department of Physics, Sengunthar Engineering College, Tiruchengode, Tamil Nadu, India, M. Sudha, A. B. Madhan, Department of Mechanical Engineering, Dr.Navalar Nedunchezhiyan college of Engineering, Tholudur, Tamil Nadu, India, M. Revathi, Department of Physics, Excel Engineering College, Komarapalayam,, Tamil Nadu, India

Chalcogenide Letters· Volume 21· Issue 10

Abstract

Zinc sulfide thin films were prepared using the economical spray pyrolysis process. A thin film of exceptional quality with a temperature difference of 300 °C to 400 °C is produced by optimizing variables such as concentration, flow rate, and nozzle to substrate distance. These films' optical characteristics and structure were examined. The deposited thin films displayed a direct and allowed transition, as indicated by the optical transmittance spectra. XRD analysis confirmed that the deposited thin films were polycrystalline with a cubic phase. This film can be used in solar cell applications since the band gap energy fluctuation is high enough, ranging from 3.42 to 3.81 eV.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · ZnO doping and properties · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (16)

Show source-provided references
1. [1] M.Sudha, P. Duraisamy, International Journal of Scientific research 1(2), 159 (2012).
2. [2]S.Thirumalairajan, K. Girija, M. Sudha, P. Mateshwaran, J. Chandrasekaean, Optoelectronics and Advanced Materials - Rapid Communication 2(2), 779 (2008).
3. [3]M.Sudha, P. Duraisamy, Optoelectronics and Advanced Materials - Rapid Communications 6(11-12), 999 (2012).
4. [4] A. Poongodi, N. Thangaraj, M. Sudha, Journal of Ovonic Research 19(1), 73 (2023) https://doi.org/10.15251/JOR.2023.191.7310.15251/JOR.2023.191.73 ↗
5. [5] M Sudha, AB Madhan, E Geetha, R Satheeskumar Journal of Ovonic Research 20 (2)
6. [6] Hey-Jin Lim, Deuk Yong Lee, Young-Jei Oh, Sensor and Actuators 125, 405 (2006); https://doi.org/10.1016/j.sna.2005.08.03110.1016/j.sna.2005.08.031 ↗
7. [7] Dae- Kue Hwang, Min-Suk Oh, Jae-Hong Lim, Seong-Ju Park, Journal of physics D: Applied Physics, 40, 387 (2007); https://doi.org/10.1088/0022-3727/40/22/R01 84510.1088/0022-3727/40/22/R01 ↗
8. [8] S.Hamrouni, M. S. Alkhalifah, M. S. El-Bana, S. K. Zobaidi, S. Belgacem, Applied Physics a Material Science and Processing 124, 555 (2018); https://doi.org/10.1007/s00339-018-1980-z10.1007/s00339-018-1980-z ↗
9. [9] Yuanming Liu, Long Zhao, Zhipeng Zhang, Daokun Chen, Guofu Zhang, Juncongshe, Shaozhi Deng, Ningsheng xu and Jun Chen, IEEE Transactions on electron device, 65(5), 1982 (2018).
10. [10] Wang Z. L, Song J, Science, 312(5771), 242 (2008); https://doi.org/10.1126/science.112400510.1126/science.1124005 ↗
11. [11] A.H. Eid, S.M. Salim, M.B. Sedik, H. Omar, T. Dahy, H.M. Abou_elkhair, Journal of Applied Sciences Research, 6(6): 777-784, 2010, INSInet Publication
12. [12] P. Prete, N. Lovergine, M. Mazzer, C. Zanotti-Fregonara, A. M. Mancini Journal of Crystal Growth 204 (1999) 29; https://doi.org/10.1016/S0022-0248(99)00168-210.1016/S0022-0248(99)00168-2 ↗
13. [13] B. Elidrissi, M. Addou, M. Regragui, A. Bougrine, A. Kachouane, J.C. Bernede, Materials Chemistry and Physics 68 (2001) 175; https://doi.org/10.1016/S0254- 0584(00)00351-510.1016/S0254-0584(00)00351-5 ↗
14. [14] M. A. Tagliente, M. Penza, M. Gusso, A. Quirini, Thin Solid Films 353 (1999) 129; https://doi.org/10.1016/S0040-6090(99)00395-810.1016/S0040-6090(99)00395-8 ↗
15. [15] S. H. Su, M. Yokayoma, Y. K. Su, Mater. Chem. and Phys. 42 (1995) 217; https://doi.org/10.1016/0254-0584(95)01596-510.1016/0254-0584(95)01596-5 ↗
16. [16] S.Lindroos, Y.Charriere, T.Kannainen, M.Leskela, S.Benazeth, Journal of Materials Chemistry 7 (1997) 741; https://doi.org/10.1039/a608383h10.1039/a608383h ↗