journal article·2011-12-27

Binary Pt–Si Nanostructures Prepared by Focused Electron-Beam-Induced Deposition

Marcel Winhold, Christian H. Schwalb, Fabrizio Porrati, Roland Sachser, Achilleas S. Frangakis, Britta Kämpken, Andreas Terfort, Norbert Auner, Michael Huth

ACS Nano· Volume 5· Issue 12
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Abstract

Binary systems of Pt-Si are prepared by electron-beam-induced deposition using the two precursors, trimethyl(methylcyclopentadienyl)platinum(IV) (MeCpPt(Me)(3)) and neopentasilane (Si(SiH(3))(4)), simultaneously. By varying the relative flux of the two precursors during deposition, we are able to study composites containing platinum and silicon in different ratios by means of energy-dispersive X-ray spectroscopy, atomic force microscopy, electrical transport measurements, and transmission electron microscopy. The results show strong evidence for the formation of a binary, metastable Pt(2)Si(3) phase, leading to a maximum in the conductivity for a Si/Pt ratio of 3:2.
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Research context

OpenAlex topics: Semiconductor materials and interfaces · Integrated Circuits and Semiconductor Failure Analysis · Advanced Electron Microscopy Techniques and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Physikalisches Institut, ‡Institut für Biophysik, and §Institut für Anorganische und Analytische Chemie, Goethe Universität, 60438 Frankfurt am Main, Germany.

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