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journal article·2020-06-23Open access

Surfactant-Mediated Growth and Patterning of Atomically Thin Transition Metal Dichalcogenides

Xufan Li, Ethan Kahn, Gugang Chen, Xiahan Sang, Jincheng Lei, Donata Passarello, Akinola D. Oyedele, Dante Zakhidov, Kai-Wen Chen, Yu-Xun Chen, Shang-Hsien Hsieh, Kazunori Fujisawa, Raymond R. Unocic, Kai Xiao, Alberto Salleo, Michael F. Toney, Chia-Hao Chen, Efthimios Kaxiras, Mauricio Terrones, Boris I. Yakobson, Avetik R. Harutyunyan

ACS Nano· Volume 14· Issue 6
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Source abstract

Abstract

The role of additives in facilitating the growth of conventional semiconducting thin films is well-established. Apparently, their presence is also decisive in the growth of two-dimensional transition metal dichalcogenides (TMDs), yet their role remains ambiguous. In this work, we show that the use of sodium bromide enables synthesis of TMD monolayers via a surfactant-mediated growth mechanism, without introducing liquefaction of metal oxide precursors. We discovered that sodium ions provided by sodium bromide chemically passivate edges of growing molybdenum disulfide crystals, relaxing in-plane strains to suppress 3D islanding and promote monolayer growth. To exploit this growth model, molybdenum disulfide monolayers were directly grown into desired patterns using predeposited sodium bromide as a removable template. The surfactant-mediated growth not only extends the families of metal oxide precursors but also offers a way for lithography-free patterning of TMD monolayers on various surfaces to facilitate fabrication of atomically thin electronic devices.
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Research context

OpenAlex topics: 2D Materials and Applications · Advanced Sensor and Energy Harvesting Materials · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Honda Research Institute USA Inc., San Jose, California 95134, United States

Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States

Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States

Department of Materials Science and Nano Engineering, Rice University, Houston, Texas 77005, United States

Stanford Synchrotron Radiation Light Source, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States

Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States

National Synchrotron Radiation Research Center (NSRRC), Hsinchu 30076, Taiwan

Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States

Funding

Army Research Office · Division of Graduate Education · Division of Materials Research

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