Source abstract
Abstract
One of the primary limitations of previously reported two-dimensional (2D) photodetectors is a low frequency response (≪ 1 Hz) for sensitive devices with gain. Yet, little efforts have been devoted to improve the temporal response of photodetectors while maintaining high gain and responsivity. Here, we demonstrate a gain of 6.3 × 103 electrons per photon and a responsivity of 2.6 × 103 A/W while simultaneously exhibiting an ultrafast response time of 40–65 μs in a hybrid photodetector that consists of graphene-WS2-graphene junctions covered with indium (In) adatoms atop. The resultant responsivity is 6 orders of magnitude higher than that of conventional photodetectors comprising solely of a Au-WS2-Au junction. The photogain is provided mainly by the adsorbed In adatoms, from which photogenerated electrons can be transferred to the WS2 channel, while holes remain trapped in In adatoms, leading to a photogating effect as electrons are recirculating during the residence of holes in In adatoms. At a gate voltage near the Dirac point of graphene, a detectivity of D* = 2.2 × 1012 Jones and an ON/OFF ratio of 104 are achieved. The enhanced performance of the device can be attributed partly to the transparent graphene/WS2 contact and partly to the strong capacitive coupling of the In adatoms with the WS2 channel, which enables ultrafast carrier dynamics.
Source: openalex_inverted_index · Quality: baseline
Affiliations
Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
Department of Physics, National Taiwan University, Taipei 10617, Taiwan
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan
Frontier Research Center on Fundamental and Applied Science of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
Funding
Ministry of Science and Technology, Taiwan · Japan Society for the Promotion of Science · Academia Sinica