DataVXChalcogenide LettersPaper
journal article·2020-11Open access

THE CONCENTRATION OF ELECTRON-HOLE PAIRS GENERATED BY THE INTERACTION OF ELECTRON WITH MATTER, CASE OF CdS USING MONTE CARLO SIMULATION

Laboratory of Semiconductor Devices Physics, University Tahri Mohammed of Bechar, Algeria, Z. TIOUTI, B. AZEDDINE, Laboratory of Semiconductor Devices Physics, University Tahri Mohammed of Bechar, Algeria, A. HELMAOUI, Laboratory of Semiconductor Devices Physics, University Tahri Mohammed of Bechar, Algeria

Chalcogenide Letters· Volume 17· Issue 11
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Source abstract

Abstract

In this study, we use a Monte Carlo Calculation code to simulate the stopping range and the concentration of electron-hole pairs generated of each point in the solid targets under a bombardment, those electrons and holes generating a low electrical power source for many specialized applications. The model has been tested for CdS structure, under a bombardment of one electron with energy 50 - 150 KeV.
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Research context

OpenAlex topics: Electron and X-Ray Spectroscopy Techniques

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