DataVXChalcogenide LettersPaper
journal article·2023-07Open access

Structure and electronic properties of thin Ge2Sb2Te5 films produced by DC ion-plasma spattering

Volkovgeology JSC, Kazatomprom, 168, Bogenbai batyr Street, Almaty, Kazakhstan, 050012, S. Sultanbekov, O. Prikhodko, IETP, NAO Al-Farabi Kazakh National University, 71 Al-Farabi Avn, 050040, Almaty, Kazakhstan, N. Almas, Department of Science and Innovation, Astana IT University, Mangilik Yel, 55/11, Astana, Kazakhstan, 010000

Chalcogenide Letters· Volume 20· Issue 7
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Abstract

The optical properties of Ge2Sb2Te5 thin films were studied as a function of thickness. An increase in optical band gap with decreasing film thickness has been observed. The current– voltage characteristics measured in Ge2Sb2Te5 thin films in the current mode are studied. A decrease in switching time and threshold voltage with decreasing film thickness is established.
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Research context

OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Nonlinear Optical Materials Studies

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References (16)

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