DataVXChalcogenide LettersPaper
journal article·2020-10Open access

EFFECT OF TIN PRECURSORS ON THE DEPOSITION OF Cu2ZnSnS4 THIN FILMS

Solar Energy Laboratory, Sree Vidyanikethan Engineering College, Tirupati, India, D. NAGAMALLESWARI, Department of Physics, Jawaharlal Nehru Technological University Ananthapur, Anantapuramu, India, Y. B. KISHOREKUMAR, Solar Energy Laboratory, Sree Vidyanikethan Engineering College, Tirupati, India, Y. B. KIRAN, Center for Applied Sciences, Sree Vidyanikethan Engineering College, Tirupati, India, G. SURESHBABU, Department of Physics, Government Degree College, Pakala, India

Chalcogenide Letters· Volume 17· Issue 10
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Source abstract

Abstract

Cu2ZnSnS4 is a potential compound semiconducting material for solar absorber layer in thin film heterojunction solar cells. Chemical spray pyrolysis technique has been successfully employed to deposit these thin films using two different tin precursors. Thin films were characterized by studying their structural, composition, electrical and optical properties. X-ray diffraction pattern reveals that these films exhibit polycrystalline nature with kesterite structure. Lattice parameters of Cu2ZnSnS4 films are found to be a = b = 0.544 nm and c = 1.084 nm. Optical band gap, evaluated from spectral transmittance data, is close to ideal energy gap (1.5 eV) exhibit highest conversion efficiency. Optical absorption coefficient of these films is ≥ 104 cm-1 . These films exhibit p-type nature. A humble attempt is made to fabricate a typical heterojunction Cu2ZnSnS4 thin film solar cell.
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Research context

Materials processing

OpenAlex topics: Chalcogenide Semiconductor Thin Films

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