Single Photon Emission from Site-Controlled InAs Quantum Dots Grown on GaAs(001) Patterned Substrates
Source abstract
Abstract
We present a fabrication method to produce site-controlled and regularly spaced InAs/GaAs quantum dots for applications in quantum optical information devices. The high selectivity of our epitaxial regrowth procedure can be used to allocate the quantum dots only in positions predefined by ex-situ local oxidation atomic force nanolithography. The quantum dots obtained following this fabrication process present a high optical quality which we have evaluated by microphotoluminescence and photon correlation experiments.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Nanowire Synthesis and Applications · Semiconductor Lasers and Optical Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
IMM, Instituto de Microelectrónica de Madrid (CNM, CSIC), Isaac Newton 8, 28760 Tres Cantos, Madrid, Spain
ICMUV, Instituto de Ciencia de Materiales, Universidad de Valencia, P.O. Box 2085, 46071 Valencia, Spain
References (26)
Show source-provided references
1. Santori C. · Phys. Rev. Lett. · 2001 · 86 · 150210.1103/PhysRevLett.86.1502 ↗
2. Stevenson R. M. · Nature · 2006 · 439 · 17910.1038/nature04446 ↗
3. Li X. · Science · 2003 · 301 · 80910.1126/science.1083800 ↗
4. Robledo L. · Science · 2008 · 320 · 77210.1126/science.1155374 ↗
5. Seifert W. · Prog. Cryst. Growth Charact. · 1996 · 33 · 42310.1016/S0960-8974(96)00090-3 ↗
6. Heidemeyer H. · J. Cryst. Growth · 2004 · 261 · 44410.1016/j.jcrysgro.2003.09.030 ↗
7. Alonso-González P. · Nanotechnology · 2007 · 18 · 355−30210.1088/0957-4484/18/35/355302 ↗
8. Pelucchi E. · Nano Lett. · 2007 · 7 · 128210.1021/nl0702012 ↗
9. Tran T. · Appl. Phys. Lett. · 2007 · 91 · 133104-1−310.1063/1.2790498 ↗
10. Wang L. · New J. Phys. · 2008 · 10 · 04501010.1088/1367-2630/10/4/045010 ↗
11. Atkinson P. · Appl. Phys. Lett. · 2008 · 93 · 101908-1−310.1063/1.2980445 ↗
12. Schneider C. · Appl. Phys. Lett. · 2008 · 92 · 183101-1−3
13. Martín-Sánchez J. · J. Cryst. Growth · 2005 · 284 · 31310.1016/j.jcrysgro.2005.06.055 ↗
14. Kim J. · Appl. Phys. Lett. · 2006 · 88 · 072107-1−3
15. Song H. Z. · Nanoscale Res. Lett. · 2006 · 1 · 16010.1007/s11671-006-9012-x ↗
16. Martín-Sánchez J. · J. Cryst. Growth · 2008 · 310 · 467610.1016/j.jcrysgro.2008.08.041 ↗
17. Martín-Sánchez J. · Nanotechnology · 2009 · 20 · 12530210.1088/0957-4484/20/12/125302 ↗
18. Briones F. · J. Cryst. Growth · 1991 · 111 · 19410.1016/0022-0248(91)90970-G ↗
19. Egilsson T. · Phys. Rev. B · 1994 · 50 · 199610.1103/PhysRevB.50.1996 ↗
20. Rodt S. · J. Lumin. · 2007 · 122 · 73510.1016/j.jlumin.2006.01.274 ↗
21. Muñoz-Matutano G. · Nanotechnology · 2008 · 19 · 14571110.1088/0957-4484/19/14/145711 ↗
22. Wang C. F. · Appl. Phys. Lett. · 2004 · 85 · 342310.1063/1.1806251 ↗
23. Feucker M. · Appl. Phys. Lett. · 2008 · 92 · 063116-1−310.1063/1.2844886 ↗
24. Hanbury-Brown R. · Nature · 1956 · 178 · 144710.1038/1781447a0 ↗
25. Koashi M. · Phys. Rev. Lett. · 1993 · 71 · 116410.1103/PhysRevLett.71.1164 ↗
26. Santori C. · New J. Phys. · 2004 · 6 · 8910.1088/1367-2630/6/1/089 ↗