journal article·2018-10-23

Introduction of Protonated Sites on Exfoliated, Large-Area Sheets of Hexagonal Boron Nitride

Kabeer Jasuja, Kayum Ayinde, Christina L. Wilson, Sanjay K. Behura, Myles A. Ikenbbery, David Moore, Keith Hohn, Vikas Berry

ACS Nano· Volume 12· Issue 10
Publisher page

Abstract

Hexagonal boron nitride (h-BN) sheets possess an exclusive set of properties, including wide energy band gap, high optical transparency, high dielectric breakdown strength, high thermal conductivity, UV cathodoluminescence, and pronounced thermochemical stability. However, functionalization of large h-BN layers has remained a challenge due to their chemical resistance and unavailable molecular-binding sites. Here we report on the protonation of h-BN via treatment with chlorosulfonic acid that not only exfoliates “large” h-BNs (up to 10 000 μm2) at high yields (∼23%) but also results in their covalent functionalization by introducing four forms of aminated nitrogen (N) sites within the h-BN lattice: sp2-delocalized and sp3-quaternary protonation on internal N sites (>N+═ and >NH+−) and pyridinic-like protonation on the edge N sites (═NH+– and −NH−). The presence of these groups transforms the chemically passive h-BN sheets to their chemically active form, which as demonstrated here can be used as scaffolds for forming composites with plasmonic gold nanoparticles and organic dye molecules. The dispersion of h-BNs exhibits an optical energy band gap of 5.74 eV and a zeta potential of ζ = +36.25 mV at pH = 6.1 (ζmax = +150 mV), confirming high dispersion stability. We envision that these two-dimensional nanomaterials with an atomically packed honeycomb lattice and high-energy band gap will evolve next-generation applications in controlled-UV emission, atomic-tunneling-barrier devices, ultrathin controlled-permeability membranes, and thermochemically resistive transparent coatings.
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Research context

OpenAlex topics: Graphene research and applications · 2D Materials and Applications · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Chemical Engineering, Indian Institute of Technology, Gandhinagar, Palaj, Gujarat 382355, India

Department of Chemical Engineering, Kansas State University, 1005 Durland Hall, Manhattan, Kansas 66502, United States

Department of Chemical Engineering, University of Illinois at Chicago, 810 S. Clinton Street, Chicago, Illinois 60607, United States

Microscopy and Analytical Imaging Laboratory, University of Kansas, Lawrence, Kansas 66045, United States

Funding

Division of Civil, Mechanical and Manufacturing Innovation

References (50)

Show source-provided references
1. 10.1063/1.290370210.1063/1.2903702 ↗
2. 10.1039/b804575e10.1039/b804575e ↗
3. 10.1103/PhysRevB.74.15341310.1103/PhysRevB.74.153413 ↗
4. 10.1021/ja063653+10.1021/ja063653+ ↗
5. 10.1002/adma.20070017910.1002/adma.200700179 ↗
6. 10.1021/nn100649510.1021/nn1006495 ↗
7. 10.1038/nphoton.2009.16710.1038/nphoton.2009.167 ↗
8. 10.1063/1.292568510.1063/1.2925685 ↗
9. 10.1103/PhysRevB.78.15520410.1103/PhysRevB.78.155204 ↗
10. 10.1143/JJAP.39.L110110.1143/JJAP.39.L1101 ↗
11. 10.1038/nnano.2009.5810.1038/nnano.2009.58 ↗
12. 10.1021/nl801827v10.1021/nl801827v ↗
13. 10.1002/smll.20120219610.1002/smll.201202196 ↗
14. 10.1021/acsami.6b0840410.1021/acsami.6b08404 ↗
15. 10.1016/j.cej.2017.07.16210.1016/j.cej.2017.07.162 ↗
16. 10.1126/science.119497510.1126/science.1194975 ↗
17. 10.1002/adma.20090032310.1002/adma.200900323 ↗
18. 10.1021/nn901648q10.1021/nn901648q ↗
19. 10.1063/1.304163910.1063/1.3041639 ↗
20. 10.1021/jz900210810.1021/jz9002108 ↗
21. 10.1021/nl203249a10.1021/nl203249a ↗
22. 10.1021/jacs.5b0773910.1021/jacs.5b07739 ↗
23. 10.1021/acsnano.7b0166610.1021/acsnano.7b01666 ↗
24. 10.1021/acs.langmuir.7b0346110.1021/acs.langmuir.7b03461 ↗
25. 10.1021/acs.nanolett.7b0433510.1021/acs.nanolett.7b04335 ↗
26. 10.1021/jp036971t10.1021/jp036971t ↗
27. 10.1021/nn100864v10.1021/nn100864v ↗
28. 10.1038/nnano.2009.30210.1038/nnano.2009.302 ↗
29. 10.1038/nnano.2010.8610.1038/nnano.2010.86 ↗
30. 10.1021/am900321f10.1021/am900321f ↗
31. 10.1103/PhysRevB.51.686810.1103/PhysRevB.51.6868 ↗
32. 10.1021/nl102213910.1021/nl1022139 ↗
33. 10.1038/ncomms546110.1038/ncomms5461 ↗
34. 10.1021/nn100315s10.1021/nn100315s ↗
35. 10.1021/jp106465u10.1021/jp106465u ↗
36. 10.1007/s10947-006-0133-y10.1007/s10947-006-0133-y ↗
37. 10.1016/0021-9797(79)90045-610.1016/0021-9797(79)90045-6 ↗
38. 10.1002/pol.1949.12004032110.1002/pol.1949.120040321 ↗
39. 10.1021/jp105454w10.1021/jp105454w ↗
40. 10.1007/BF0052693010.1007/BF00526930 ↗
41. 10.1103/PhysRev.146.54310.1103/PhysRev.146.543 ↗
42. 10.1021/nl060254410.1021/nl0602544 ↗
43. 10.1002/smll.20100162810.1002/smll.201001628 ↗
44. 10.1103/PhysRevB.18.444010.1103/PhysRevB.18.4440 ↗
45. 10.1103/PhysRevB.61.1409510.1103/PhysRevB.61.14095 ↗
46. 10.1021/nl071822y10.1021/nl071822y ↗
47. 10.1021/jp811377n10.1021/jp811377n ↗
48. 10.1021/jp984362t10.1021/jp984362t ↗
49. 10.1063/1.281869210.1063/1.2818692 ↗
50. 10.1038/nnano.2008.6710.1038/nnano.2008.67 ↗