Self-Formed Exchange Bias of Switchable Conducting Filaments in NiO Resistive Random Access Memory Capacitors
Source abstract
Abstract
We report on the ferromagnetism of conducting filaments formed in a NiO thin film, which exhibited a typical bistable resistive switching characteristic. The NiO thin film showed an antiferromagnetic hysteresis loop for a high resistive state (R(OFF)). However, for a low resistive state (R(ON)), the conducting filaments exhibited a ferromagnetic hysteresis loop for the field cooling. The ferromagnetic hysteresis behavior of the R(ON) state reveals switchable exchange coupling between the ferromagnetic Ni conducting filaments and the antiferromagnetic NiO layer.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Phase-change materials and chalcogenides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea
RCDAMP and Department of Physics Education, Pusan National University, Pusan 609-735, Korea
Departments of Physics and Chemistry, University of Ulsan, Ulsan 680-749, Korea
References (28)
Show source-provided references
1. Ovshinsky S. R. · Phys. Rev. Lett. · 1968 · 21 · 145010.1103/PhysRevLett.21.1450 ↗
2. Waser R. · Nat. Mater. · 2007 · 6 · 83310.1038/nmat2023 ↗
3. Ventra M. Di · Proc. IEEE · 2009 · 97 · 171710.1109/JPROC.2009.2021077 ↗
4. Rozenberg M. J. · Phys. Rev. Lett. · 2004 · 92 · 17830210.1103/PhysRevLett.92.178302 ↗
5. Fujii T. · Appl. Phys. Lett. · 2005 · 86 · 01210710.1063/1.1845598 ↗
6. Mitkova M. · Phys. Rev. Lett. · 1999 · 83 · 384810.1103/PhysRevLett.83.3848 ↗
7. Seo S. · Appl. Phys. Lett. · 2004 · 85 · 565510.1063/1.1831560 ↗
8. Szot K. · Nat. Mater. · 2006 · 5 · 31210.1038/nmat1614 ↗
9. Son J. Y. · Appl. Phys. Lett. · 2008 · 92 · 13351010.1063/1.2897306 ↗
10. Son J. Y. · Appl. Phys. Lett. · 2008 · 92 · 22210610.1063/1.2931087 ↗
11. Quintero M. · Phys. Rev. Lett. · 2007 · 98 · 11660110.1103/PhysRevLett.98.116601 ↗
12. Park G. · Appl. Phys. Lett. · 2007 · 91 · 22210310.1063/1.2813617 ↗
13. Gibbons J. F. · Solid-State Electron. · 1964 · 7 · 78510.1016/0038-1101(64)90131-5 ↗
14. Park C. · Appl. Phys. Lett. · 2008 · 93 · 04210210.1063/1.2963983 ↗
15. Park S. · Phys. Rev. B · 2008 · 77 · 13410310.1103/PhysRevB.77.134103 ↗
16. Meiklejohn W. H. · Phys. Rev. · 1957 · 105 · 90410.1103/PhysRev.105.904 ↗
17. Nogu J. · Phys. Rep. · 2005 · 422 · 6510.1016/j.physrep.2005.08.004 ↗
18. Fraune M. · Appl. Phys. Lett. · 2000 · 77 · 381510.1063/1.1330752 ↗
19. Liu K. · Phy. Rev. B · 2001 · 63 · 06040310.1103/PhysRevB.63.060403 ↗
20. Yang E.-C. · Polyhedron · 2003 · 22 · 172710.1016/S0277-5387(03)00149-9 ↗
21. Sort J. · Appl. Phys. Lett. · 2004 · 84 · 369610.1063/1.1737484 ↗
22. Zheng R. K. · Appl. Phys. Lett. · 2004 · 85 · 258910.1063/1.1795366 ↗
23. Brück S. · Adv. Mater. · 2005 · 17 · 297810.1002/adma.200500544 ↗
24. Dho J · Adv. Mater. · 2006 · 18 · 144510.1002/adma.200502622 ↗
25. Fassbender J. · J. Magn. Magn. Mater. · 2008 · 320 · 57910.1016/j.jmmm.2007.07.032 ↗
26. Nakashio E. · J. Appl. Phys. · 2001 · 89 · 735610.1063/1.1357122 ↗
27. Kim D. C. · Appl. Phys. Lett. · 2006 · 88 · 20210210.1063/1.2204649 ↗
28. Kowalewski M. · Phys. Rev. B · 1993 · 47 · 874810.1103/PhysRevB.47.8748 ↗