Fabrication and investigation of zinc telluride thin films
Source abstract
Abstract
Zinc Telluride ZnTe alloys and thin film have been fabricated and deposited on glass substrates by thermal evaporation method which may be a suitable window layer of zinc telluride with different annealing temperatures (373 and473) K for 60 minutes in vacuum. Deposited thin films with thickness 100 nm was characteristic by using X-ray diffraction XRD to know structures, Atomic Force Microscopy (AFM) to evaluate surface topology, morphology. It was found out that the vacuum annealing improves on thin ZnTe films structure and surface morphology. Structural analysis reveals that ZnTe films have zinc blende structure of cubic phase with (111) preferred reflection and grain size is enhanced from 8.6 to 16.7 nm with annealing. Optical properties where optical bandgap energy values slightly decreased (2.3-2.2) eV as the annealing temperatures.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Advanced Semiconductor Detectors and Materials · Quantum Dots Synthesis And Properties
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