DataVXChalcogenide LettersPaper
journal article·2020-09Open access

HETEROJUNCTION p-Cu2SnS3/n-ZnO

Voronezh State University of Engineering Technologies, 19 Revolution Av., Voronezh, Russia, A. V. BUDANOV, YU. N. VLASOV, Voronezh State University of Engineering Technologies, 19 Revolution Av., Voronezh, Russia, G. I. KOTOV, Voronezh State University of Engineering Technologies, 19 Revolution Av., Voronezh, Russia, YU.V. SYNOROV, Voronezh State University of Engineering Technologies, 19 Revolution Av., Voronezh, Russia, S. YU. PANKOV, Voronezh State Technical University, 14 Moskovsky Av., Voronezh, Russia, E. V. RUDNEV, Voronezh State University, 1 Universitetskaya pl., Voronezh, Russia, V. E. TERNOVAYA, Voronezh State University, 1 Universitetskaya pl., Voronezh, Russia, S. A. IVKOV, Voronezh State University, 1 Universitetskaya pl., Voronezh, Russia

Chalcogenide Letters· Volume 17· Issue 9
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Source abstract

Abstract

Conditions for the formation of a Cu2SnS3 film uniform in phase composition upon annealing of a metal layer of copper and tin in sulfur vapor in a quasi-closed volume chamber using the methods of X-ray spectral microanalysis and X-ray phase analysis are presented. The rectifying heterojunction p-Cu2SnS3/n-ZnO was fabricated. PACS numbers: 81.20.−n, 61.10.Nz, 84.60.Jt
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Research context

Materials processing

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Copper-based nanomaterials and applications · Gas Sensing Nanomaterials and Sensors

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