journal article·2024-12-31Open access

Study of CdSe thin films using the spectroscopic ellipsometry method

Institute of Natural Resources, Ministry of Science and Education Republic of Azerbaijan, Nakhchivan, AZ-7000, Azerbaijan, L.N. Ibrahimova, Kh. N. Ahmadova, c Institute of Physics, Ministry of Science and Education Republic of Azerbaijan, Baku, AZ-1143, Azerbaijan, M. E. Aliyev, Nakhchivan State University, Nakhchivan, AZ-7012, Azerbaijan, Y.I. Aliyev, Azerbaijan State Pedagogical University, Baku, AZ-1000, Azerbaijan

Chalcogenide Letters· Volume 21· Issue 12

Abstract

In this research, we investigated the optical properties of CdSe thin films on glass substrates using spectroscopic ellipsometry. The samples were analysed using an M-2000 rotation compensator spectroscopic ellipsometer at room temperature, covering a photon energy range of 1.5-7.0 eV. We used an appropriate dispersion model to obtain the spectral dispersion of the optical constants. We calculated the thickness, dielectric permittivity (real and imaginary parts), refraction, and extinction coefficients of the thin layers. The results showed high transparency that varied with the size of the CdSe thin films. Additionally, we determined the bandgap width for samples with thicknesses of 350 nm and 400 nm, which were produced using the chemical deposition method.
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Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications

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