Inelastic Transport and Low-Bias Rectification in a Single-Molecule Diode
Source abstract
Abstract
Designing, controlling, and understanding rectification behavior in molecular-scale devices has been a goal of the molecular electronics community for many years. Here we study the transport behavior of a single molecule diode, and its nonrectifying, symmetric counterpart at low temperatures, and at both low and high biases to help elucidate the electron-phonon interactions and transport mechanisms in the rectifying system. We find that the onset of current rectification occurs at low biases, indicating a significant change in the elastic transport pathway. However, the peaks in the inelastic electron tunneling (IET) spectrum are antisymmetric about zero bias and show no significant changes in energy or intensity in the forward or reverse bias directions, indicating that despite the change in the elastic transmission probability there is little impact on the inelastic pathway. These results agree with first principles calculations performed to evaluate the IETS, which also allow us to identify which modes are active in the single molecule junction.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Molecular Junctions and Nanostructures · Quantum and electron transport phenomena · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
The Center for Bioelectronics and Biosensors, Biodesign Institute, Arizona State University School of Electrical, Energy and Computer Engineering, 1001 S. McAllister Avenue, Tempe, Arizona 85281-5801, United States
Department of Electrical and Computer Engineering, University of California, Davis, One Shields Avenue, Davis, California 95616, United States
Nanosystem Research Institute (NRI), “RICS”, National Institute of Advanced Industrial Science and Technology (AIST), Central 2, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan
Department of Physical Chemistry, University of Barcelona (UB), Barcelona 08028, Spain
Energy Systems Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 50-1, Sang-ri, Hyeonpung-myeon, Dalseong-gun, Daegu, Korea
Department of Chemistry and The James Frank Institute, The University of Chicago, 929 E 57th Street, Chicago, Illinois 60637, United States
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