DataVXChalcogenide LettersPaper
journal article·2023-11Open access

The role of Cu doping in properties of CdZnS thin films

Faculty of Pharmacy, Jabir Ibn Hayyan Medical University, Najaf, Iraq, K. A. Mohammed, R. A. Talib, Polymer research center, university of Basrah, Basra, Iraq, B. Bhavani, Department of Civil Engineering, Institute of Aeronautical Engineering, Hyderabad, Telangana, India, N. H. J. Al Hasan, Department of engineering materials, college of engineering, University of Basrah, Basrah, Iraq, A. Kareem, Department of Medical Physics, Hilla University College, Babylon, Iraq, F. H. Alsultany, Department of Medical Physics, Al-Mustaqbal University College, 51001, Hillah, Babil, Iraq, R. S. Zabibah, Medical Laboratory Technology Department, College of Medical Technology, the Islamic University, Najaf, Iraq, M. A. Alkhafaji, National University of Science and Technology, Dhi Qar, Iraq, S. Sharma, Mechanical engineering Department, University Center for research and Development, Chandigarh University, Mohali, Punjab, 140413, India

Chalcogenide Letters
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Abstract

CdZnS thin films created via chemical bath deposition were examined to see how Cu doping affected their characteristics. Cu ions were added to the films in order to change their optical, structural, and morphological characteristics. These findings suggest that Cu doping can be used to modify the optical characteristics of CdZnS thin films. By using Xray diffraction (XRD) and the energy dispersive analysis of X-ray method (EDAX), we were able to investigate the compositional ratio as well as the structural features of the films. The field emission scanning electron microscopy (FESEM) technique was utilized in order to investigate the surface morphology of the produced films. The morphology of prepared films was fiber-like and in nanoscale. In addition, the UV–vis spectroscopy technique was utilized in order to characterize the optical properties of thin films. The prepared Cu-CdZnS film was found to have direct band gap equal to 2.64 eV and indirect gap equal to 2.4 eV.
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NanomaterialsMaterials processing

OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Copper-based nanomaterials and applications

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