journal article·2012-01-24

Chiral Index Dependence of the G+ and G– Raman Modes in Semiconducting Carbon Nanotubes

Hagen Telg, Juan G. Duque, Matthias Staiger, Xiaomin Tu, Frank Hennrich, Manfred M. Kappes, Ming Zheng, Janina Maultzsch, Christian Thomsen, Stephen K. Doorn

ACS Nano· Volume 6· Issue 1
Publisher page

Abstract

Raman spectroscopy on the radial breathing mode is a common tool to determine the diameter d or chiral indices (n,m) of single-wall carbon nanotubes. In this work we present an alternative technique to determine d and (n,m) based on the high-energy G(-) mode. From resonant Raman scattering experiments on 14 highly purified single chirality (n,m) samples we obtain the diameter, chiral angle, and family dependence of the G(-) and G(+) peak position. Considering theoretical predictions we discuss the origin of these dependences with respect to rehybridization of the carbon orbitals, confinement, and electron-electron interactions. The relative Raman intensities of the two peaks have a systematic chiral angle dependence in agreement with theories considering the symmetry of nanotubes and the associated phonons.
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Research context

OpenAlex topics: Carbon Nanotubes in Composites · Graphene research and applications · Boron and Carbon Nanomaterials Research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States

Chemistry Division, Physical Chemistry and Applied Spectroscopy (C-PCS), Los Alamos National Laboratory, Los Alamos, NewMexico 87545, United States

Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany

Polymers Division, National Institute of Standards and Technology, 100 Bureau Drive, Stop 8540, Gaithersburg, Maryland 20899-8540, United States

Institut für Nanotechnologie, Karlsruher Institut für Technologie, D-76021 Karlsruhe, Germany

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