Growth and characterization of tin disulphide thin film by spray pyrolysis technique
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Abstract
An inexpensive spray pyrolysis process has been used to create thin layer of tin disulphide. The concentration, flow rate, and nozzle to substrate distance were tuned as deposition parameters to produce high-quality thin films. Temperature is varied in the range 200˚C to 350˚C. Through physical research, properties such as the structural, electrical and optical were examined. The films generated are SnS2 with a hexagonal structure, as revealed by X-ray diffraction. EDAX analysis confirms SnS2 thin films. Scanning electron microscopy indicated uniform stacking and material adherence to the glass substrate. A 2.22 eV straight band gap was found. Two peaks in the photoluminescence spectrum were indicative of the emission of green and yellow fluorescence, respectively. Electrical properties reveal that resistivity decreases from 3.18 x 10-2 Ω cm to 3.06 x 10-3 Ω cm, carrier concentration & mobility increases to 1.4 x 1020/ cm3 to 1.8 x 1020/ cm3 , 1.92 cm2 /Vs to 5.3 cm2 /Vs respectively with increases in temperature.
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OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · ZnO doping and properties
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References (28)
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