journal article·2020-10Open access

ENHANCED EFFICIENCY IN SWIFT 100 MeV Ni ION IRRADIATED ZnS QUANTUM DOT SENSITIZED SOLAR CELL

Department of Electronics Engineering, Howard College, University of KwaZulu-Natal, Durban- 4041, South Africa., A. GANGULY, S. S. NATH, Cachar College, Silchar-788001, India., V. M. SRIVASTAVA, Department of Electronics Engineering, Howard College, University of KwaZulu-Natal, Durban- 4041, South Africa.

Chalcogenide Letters· Volume 17· Issue 10

Abstract

The influence of high energy ion beam (swift heavy ion) on ZnS quantum dots used as a sensitizer in a solar cell, is studied in this article. 100MeV Nickel (Ni7+) ion beam is utilized for the irradiation experiment with two doses of 1×1011 ions/cm2 and 2×1011 ions/cm2 . The irradiated quantum dots are deposited as a sensitizing layer on a ZnO photoelectrode solar cell, and Current-density v/s Voltage characteristics is measured under illuminated condition. A higher value of current density is obtained for irradiated samples at a lower dose, while at a higher dose, the current density decreases. In addition, the other solar cell performance parameters are also reported for unirradiated, as well as irradiated quantum dot sensitized solar cells.
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Research context

OpenAlex topics: Quantum Dots Synthesis And Properties · TiO2 Photocatalysis and Solar Cells · Chalcogenide Semiconductor Thin Films

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