DataVXChalcogenide LettersPaper
journal article·2021-08Open access

A method for preparing high-quality PbS thin films

University of Electronic Science and Technology of China, Chengdu 610054, China, W. L. Jiang, H. Deng, University of Electronic Science and Technology of China, Chengdu 610054, China, Q. Feng, University of Electronic Science and Technology of China, Chengdu 610054, China, X. Y. Li, University of Electronic Science and Technology of China, Chengdu 610054, China

Chalcogenide Letters· Volume 18· Issue 8
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Source abstract

Abstract

High-quality lead sulfide (PbS) thin films were successfully synthesized by chemical bath deposition (CBD) method. X-ray diffraction (XRD) and scanning electron microscope (SEM) results indicated that the films had face-centered cubic (FCC) structures with strong (200) preferred orientation and high-quality crystals. The band gap of the films was about 0.65eV, which had an obvious broadening. Then I-V characteristic curve and relative response were measured, respectively. It was found that the films had good photosensitivity. Since the films had high crystallinity and preferred orientation, it was expected to achieve better practical effects in the field of infrared applications.
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Research context

Materials processing

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications

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