journal article·2023-11-14Open access

Exceptional Thermochemical Stability of Graphene on N-Polar GaN for Remote Epitaxy

Joonghoon Choi, Junseok Jeong, Xiangyu Zhu, Junghwan Kim, Bong Kyun Kang, Qingxiao Wang, Bo-In Park, Seokje Lee, Jekyung Kim, Hyunseok Kim, Jinkyoung Yoo, Gyu-Chul Yi, Dong-Seon Lee, Jeehwan Kim, Suklyun Hong, Moon J. Kim, Young Joon Hong

ACS Nano· Volume 17· Issue 21

Abstract

In this study, we investigate the thermochemical stability of graphene on the GaN substrate for metal-organic chemical vapor deposition (MOCVD)-based remote epitaxy. Despite excellent physical properties of GaN, making it a compelling choice for high-performance electronic and light-emitting device applications, the challenge of thermochemical decomposition of graphene on a GaN substrate at high temperatures has obstructed the achievement of remote homoepitaxy via MOCVD. Our research uncovers an unexpected stability of graphene on N-polar GaN, thereby enabling the MOCVD-based remote homoepitaxy of N-polar GaN. Our comparative analysis of N- and Ga-polar GaN substrates reveals markedly different outcomes: while a graphene/N-polar GaN substrate produces releasable microcrystals (μCs), a graphene/Ga-polar GaN substrate yields nonreleasable thin films. We attribute this discrepancy to the polarity-dependent thermochemical stability of graphene on the GaN substrate and its subsequent reaction with hydrogen. Evidence obtained from Raman spectroscopy, electron microscopic analyses, and overlayer delamination points to a pronounced thermochemical stability of graphene on N-polar GaN during MOCVD-based remote homoepitaxy. Molecular dynamics simulations, corroborated by experimental data, further substantiate that the thermochemical stability of graphene is reliant on the polarity of GaN, due to different reactions with hydrogen at high temperatures. Based on the N-polar remote homoepitaxy of μCs, the practical application of our findings was demonstrated in fabrication of flexible light-emitting diodes composed of p-n junction μCs with InGaN heterostructures.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Graphene research and applications · 2D Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea

GRI−TPC International Research Center, Sejong University, Seoul 05006, Republic of Korea

Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States

Graphene Research Institute, Department of Physics, Sejong University, Seoul 05006, Republic of Korea

Department of Display Materials Engineering, Soonchunhyang University, Asan, Chungnam 31538, Republic of Korea

Science Research Center (SRC) for Novel Epitaxial Quantum Architectures, Institute of Applied Physics, Department of Physics and Astronomy, Seoul National University, Seoul 08826, Republic of Korea

Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States

School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea

Funding

Los Alamos National Laboratory · National Research Foundation of Korea · Korea Basic Science Institute · Sandia National Laboratories · Korea Institute of Ceramic Engineering and Technology

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