Selective growth and characterization of gallium nitride nanowires through an N-Ga2O3 layer
Source abstract
Abstract
Abstract GaN nanowires were synthesized on sapphire substrates by chemical vapor deposition. The selective growth of GaN nanowires was obtained through an N-Ga 2 O 3 layer prepared by radio frequency magnetron sputtering. The X-ray diffraction (XRD) and Raman measurements indicated the GaN nanowires to be all indexed to the hexagonal wurtzite structure. The photoluminescence (PL) spectra were composed of a strong UV emission peak (365 nm) and a weak yellow luminescence (YL) band (~600 nm). The selective growth mechanism of GaN nanowires was briefly discussed.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (19)
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