Comprehensive Optical Band‐Edge Characterization for Multilayered MoTe 2 and Its Application in van der Waals‐Stacked Heterojunction Devices (Small 42/2025)
Source abstract
Abstract
Heterojunction Devices In article number 2503542, Ching-Hwa Ho and co-workers highlight opto-excitonic properties of 2H-MoTe2 and its applications in heterojunction devices. This work incorporates multiple visual elements to illustrate key research insights. The laboratory background emphasizes experimental basis, while the foreground depicts the stacking of layered 2D materials on a Si/SiO2 substrate, forming a p-n heterojunction between p-type SnS and n-type MoTe2.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Nanowire Synthesis and Applications · Boron and Carbon Nanomaterials Research
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Affiliations
Graduate Institute of Applied Science and Technology National Taiwan University of Science and Technology Taipei 106 Taiwan
Taiwan Consortium of Emergent Crystalline Materials (TCECM) National Science and Technology Council Taipei 106 Taiwan
References
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