A CMOS‐Compatible Protonic Memristor Made from H‐Graphene/ZrO₂/H_xWO₃ Stacks with Asymmetrical Proton Concentration

Abstract Protonic memristor has recently garnered extensive research interest as one of the most promising memories for nonvolatile data storage and neuromorphic computing applications. However, the CMOS‐combability in protonic device fabrication and operating is difficult to achieve. In this study, a proton‐based H‐graphene/ZrO₂/H_xWO₃ memristor device is demonstrated, which showcases resistive switching behavior in multiple operating environments such as vacuum, atmosphere, and high high‐humidity environment. The fabrication and operating processes are also CMOS‐compatible, enabling the integration of protonic memristors in Si‐based integrated circuits. Multistate resistive switching is demonstrated by a short writing voltage pulse (1–20 µs in pulse width) enabled by the rapid diffusion speed of proton, which renders it a good candidate for applications in high‐speed nonvolatile memory and artificial synapse for persistent reverberatory neuromorphic system and fast pattern learning via spike‐rate‐dependent plasticity (SRDP) rule.