Enhanced Ruthenium Removal and Superior Surface Quality via Abrasive‐Free Chemical Mechanical Polishing Using Synergistic Catalysis with the H2O2/PDS/FeIII‐NTA System (Small 30/2025)
Source abstract
Abstract
Chemical Mechanical Polishing In article number 2410586, Jianwei Zhou, Yuhang Qi, and co-workers use the H2O2/PDS/FeIII-NTA system to improve the removal rate and surface quality of Ru under abrasive-free chemical mechanical polishing technology. It shows the working principle of CMP, where atoms on the surface of the Ru escape from the wafer surface under chemical and mechanical action, thereby achieving efficient removal of the material and flattening of the material surface.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Surface Polishing Techniques · Advanced materials and composites · Integrated Circuits and Semiconductor Failure Analysis
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Affiliations
School of Electronics and Information Engineering Hebei University of Technology Tianjin 300130 China
Tianjin Key Laboratory of Electronic Materials and Devices Tianjin 300130 China
References
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