journal article·2025-06Open access

Spatially Enhanced Electrostatic Doping in Graphene Realized via Heterointerfacial Precipitated Metals (Small 23/2025)

Jiayun Liang, Ke Ma, Edward Walker, Cameron Johnson, Xiao Zhao, Tanguy Terlier, John C. Thomas, Jiawei Wan, Nicholas Dale, Eli Rotenberg, Aaron Bostwick, Chris Jozwiak, Ji‐Woong Jang, Miquel Salmeron, Paul D. Ashby, Jongkuk Kim, Haimei Zheng, Alexander Weber‐Bargioni, Thomas Beechem, Matthew P. Sherburne, Zakaria Y. Al Balushi

Small· Volume 21· Issue 23

Abstract

Electrostatic Doping In article number 2412750, Zakaria Y. Al Balushi and co-workers demonstrate a selective-area strategy for spatially tuning work function and carrier density in monolayer graphene. By implanting gallium ions into diamond-like carbon and inducing sub-monolayer gallium precipitation beneath graphene, heavy n-type doping is achieved. This approach enables precise electrostatic modulation, paving the way for engineered 2D heterostructures and advanced device architectures.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Graphene research and applications · Advanced Memory and Neural Computing · Ion-surface interactions and analysis

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Affiliations

Department of Materials Science and Engineering University of California Berkeley CA 94720 USA

School of Mechanical Engineering and Birck Nanotechnology Center Purdue University West Lafayette IN 47907 USA

The Molecular Foundry Lawrence Berkeley National Laboratory Berkeley CA 94720 USA

Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley CA 94720 USA

Shared Equipment Authority SIMS Laboratory Rice University Houston TX 77005 USA

Advanced Light Source Lawrence Berkeley National Laboratory Berkeley CA 94720 USA

Department of Extreme Environmental Coating Korea Institute of Materials Science (KIMS) Changwon 51508 Republic of Korea

Department of Mechanical Engineering Pusan National University Busan 46241 Republic of Korea

References

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