Strain‐Induced Bandgap Narrowing in Crumpled TMDs for NIR Light Detection (Small 20/2025)
Source abstract
Abstract
NIR Light Detection In article number 2411378, JaeDong Lee, Jong-Hyun Ahn, and co-workers developed graphene/transition metal dichalcogenides (TMDs)/graphene heterostructure-based strain-engineered photo sensor devices capable of detecting near-infra-red (NIR) radiation. In addition to strain-induced band gap shrinkage in TMDs, the employed non-conventional crumpling approach offered exclusive photon management with enhanced light scattering and trapping at the sinusoidal surface, resulting in increased light absorption for NIR wavelengths.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Sensor and Energy Harvesting Materials
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Affiliations
School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea
Department of Physics and Chemistry DGIST Daegu 42988 Republic of Korea
References
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