Silicon Radical‐Induced CH4 Dissociation for Uniform Graphene Coating on Silica Surface (Small 16/2024)
Source abstract
Abstract
Graphene Frameworks In article number 2306325, Zheng-Ze Pan, Devis Di Tommaso, Hirotomo Nishihara, and co-workers tackle the surface inertness of SiO2 on graphene coating over chemical vapor deposition via the pre-grafting of trimethyl silane (TMS) groups on the pristine SiO2 surface. TMS-grafted SiO2 facilitates the graphene growth via the in-situ formed Si radicals that catalyze CH4 dissociation. This provides insights on the graphene growth chemistries, promoting the synthesis of tailored graphene-based materials.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Surface Modification and Superhydrophobicity · Graphene research and applications
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Affiliations
Institute of Multidisciplinary Research for Advanced Materials Tohoku University 2‐1‐1 Katahira, Aoba‐ku Sendai Miyagi 980‐8577 Japan
Department of Chemistry Queen Mary University of London Mile End Road London E1 4NS UK
Advanced Institute for Materials Research (WPI‐AIMR) Tohoku University 2‐1‐1 Katahira, Aoba‐ku Sendai Miyagi 980‐8577 Japan
Fuji Silysia Chemical Ltd. 2‐1846 Kozoji‐cho Kasugai Aichi 487‐0013 Japan
Department of Chemistry University College London 2020 Gordon St. London WC1H 0AJ UK
References
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