Effect of Transition Metal Dichalcogenide Based Confinement Layers on the Performance of Phase‐Change Heterostructure Memory (Small 48/2023)

Phase-Change Heterostructure Memory In article number 2303659, Tae Geun Kim and co-workers present phase-change heterostructure (PCH) memory devices that control vertical atomic diffusion during operation. The device performance, such as power consumption and thermal stability, is determined by the choice of transition metal dichalcogenide-based confinement materials with different cohesive energies, providing valuable insights for the further engineering and design of PCH devices.