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journal article·2023-11Open access

Self‐Assembled Lanthanum Oxide Nanoflakes by Electrodeposition Technique for Resistive Switching Memory and Artificial Synaptic Devices (Small 46/2023)

Pradnya P. Patil, Somnath S. Kundale, Shubham V. Patil, Santosh S. Sutar, Junseong Bae, Sunil J. Kadam, Krantiveer V. More, Prashant B. Patil, Rajanish K. Kamat, Seunghyun Lee, Tukaram D. Dongale

Small· Volume 19· Issue 46
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Source abstract

Abstract

Resistive Switching Devices Seunghyun Lee, Tukaram D. Dongale, and co-workers self-assemble the lanthanum oxide nanoflakes for resistive switching (RS) devices. The fabricated devices exhibit bipolar RS characteristics, showcasing remarkable non-volatile memory properties and emulating bio-synaptic functionalities. More details can be found in article number 2303862.
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Research context

Nanomaterials

OpenAlex topics: Advanced Memory and Neural Computing

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Affiliations

Computational Electronics and Nanoscience Research Laboratory School of Nanoscience and Biotechnology Shivaji University Kolhapur 416004 India

Department of Electronic Engineering Kyung Hee University Yongin 17107 Republic of Korea

Yashwantrao Chavan School of Rural Development Shivaji University Kolhapur 416004 India

Department of Mechanical Engineering Bharati Vidyapeeth's College of Engineering Kolhapur 416013 India

Department of Chemistry Shivaji University Kolhapur 416012 India

Department of Physics The New College Shivaji University Kolhapur 416012 India

Department of Electronics Shivaji University Kolhapur 416004 India

Institute of Science Dr. Homi Bhabha State University 15, Madam Cama Road Mumbai 400032 India

References

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