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journal article·2023-05Open access

Carrier Relaxation and Multiplication in Bi Doped Graphene (Small 18/2023)

Qi Liu, Xianyang Lu, Yuxiang Liu, Zhihao Li, Pengfei Yan, Wang Chen, Qinghao Meng, Yongheng Zhang, ChiYung Yam, Liang He, Yu Yan, Yi Zhang, Jing Wu, Thomas Frauenheim, Rong Zhang, Yongbing Xu

Small· Volume 19· Issue 18
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Source abstract

Abstract

Bi Doped Graphene In article number 2206218, Xianyang Lu, Thomas Frauenheim, Yongbing Xu, and co-workers investigate femtosecond laser excitation induced electronic dynamic in Bi doped graphene, using time resolved and angular resolved photoemission spectrum. The Fermi surface in Dirac cone and carrier concentration is modulated by adatoms' content. This effectively tailors the competition between auger combination and impact excitation, tuning the carrier multiplication in graphene.
Source: openalex_inverted_index · Quality: baseline

Research context

Nanomaterials

OpenAlex topics: Graphene research and applications · Silicon Nanostructures and Photoluminescence · Photocathodes and Microchannel Plates

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Affiliations

Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering Nanjing University Nanjing 210093 China

Bremen Center for Computational Materials Science University of Bremen Am Fallturm 1 28359 Bremen Germany

National Laboratory of Solid State Microstructure School of Physics and Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 China

Shenzhen Institute for Advanced Study University of Electronic Science and Technology of China Shenzhen 518000 China

Hong Kong Quantum AI Lab Limited Hong Kong 00000 China

York‐Nanjing Joint Center (YNJC) for Spintronics and Nano‐engineering Department of Electronics and Physics University of York York YO10 5DD UK

Beijing Computational Science Research Center Haidian District Beijing 100193 China

Shenzhen JL Computational Science and Applied Research Institute Shenzhen 518109 China

References

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