Selective Dual‐Ion Modulation in Solid‐State Magnetoelectric Heterojunctions for In‐Memory Encryption (Small 16/2023)
Source abstract
Abstract
Magnetoelectric Multifunctional Nanodevices In article number 2206824, Run-Wei Li, Xiaojian Zhu, and co-workers demonstrate the selective dual-ion manipulation in a Pt/HfO2−x/NiOy/Ni magnetoelectric nanodevice and the reconfiguration of its magnetoresistance. A proof-of-concept magnetoelectric device with integrated memory and encryption functionality is designed for the secure storage of information.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Machine Learning and ELM
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Affiliations
CAS Key Laboratory of Magnetic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China
Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China
College of Materials Sciences and Opto‐Electronic Technology University of Chinese Academy of Sciences Beijing 100049 China
References
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