Ultra‐Confined Catalytic Growth Integration of Sub‐10 nm 3D Stacked Silicon Nanowires Via a Self‐Delimited Droplet Formation Strategy (Small 42/2022)

Droplet Control In article number 2204390, Linwei Yu and co-workers successfully demonstrate stacked growth integration of ultrathin silicon nanowires, with width and height of Wnw = 9.9 ± 1.2 nm (down to 8 nm) and Hnw = 18.8 ± 1.8 nm approaching to the critical-dimension of 10 nm technology node, thanks to a self-delimited droplet control strategy, with tunable channel cross-sections, which are ideal candidates for monolithic 3D integration of logic-in-memory and neuromorphic applications.