Exfoliation of Layered Topological Insulators Bi2Se3 and Bi2Te3 via Electrochemistry
Source abstract
Abstract
Among layered materials, topological insulators such as Bi 2 Se 3 and Bi 2 Te 3 are lately attracting much attention due to particular electronic properties and, especially with Bi 2 Te 3, excellent thermoelectric properties. Methods of preparation of few-layered nanosheets of Bi 2 Se 3 and Bi 2 Te 3 range from the bottom-up chemical vapor deposition or hydrothermal synthesis from oxide precursors to the top-down mechanical exfoliation and liquid-based exfoliation supported by sonication from the natural bulk crystals. Here, we propose a simple and rapid electrochemical approach to exfoliate natural Bi 2 Se 3 and Bi 2 Te 3 crystals in aqueous media to single/few-layer sheets. The exfoliated materials have been characterized by scanning transmission electron microscopy, X-ray photoelectron spectroscopy, X-ray powder diffraction, high-resolution transmission electron microscopy, and Raman spectroscopy in addition to evaluation of their electrochemical properties. This electrochemical procedure represents a simple, reagent-free, and scalable method for the fabrication of single/few-layer sheets of these materials.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Topological Materials and Phenomena · Advanced Thermoelectric Materials and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Division of Chemistry & Biological Chemistry, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371
Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
Funding
Ministry of Education - Singapore · Ministerstvo Školství, Mládeže a Telovýchovy · Grantová Agentura Ceské Republiky
References (30)
Show source-provided references
1. 10.1126/science.aac943910.1126/science.aac9439 ↗
2. 10.1021/nn400280c10.1021/nn400280c ↗
3. 10.1038/nchem.158910.1038/nchem.1589 ↗
4. 10.1039/c4ta00652f10.1039/c4ta00652f ↗
5. 10.1002/smll.20160003210.1002/smll.201600032 ↗
6. 10.1021/acsnano.6b0109110.1021/acsnano.6b01091 ↗
7. 10.1016/j.ijhydene.2016.01.03410.1016/j.ijhydene.2016.01.034 ↗
8. 10.1002/anie.20151130910.1002/anie.201511309 ↗
9. 10.1039/C6TC01913G10.1039/C6TC01913G ↗
10. 10.1038/srep1610810.1038/srep16108 ↗
11. 10.1103/PhysRevB.94.12530310.1103/PhysRevB.94.125303 ↗
12. 10.1103/PhysRevB.94.09410510.1103/PhysRevB.94.094105 ↗
13. 10.1038/nmat260910.1038/nmat2609 ↗
14. 10.1103/PhysRevLett.98.10680310.1103/PhysRevLett.98.106803 ↗
15. 10.1038/466310a10.1038/466310a ↗
16. 10.1038/srep0809910.1038/srep08099 ↗
17. 10.1021/nl903590b10.1021/nl903590b ↗
18. 10.1038/srep0479410.1038/srep04794 ↗
19. 10.1039/c2jm15973b10.1039/c2jm15973b ↗
20. 10.1021/nl101260j10.1021/nl101260j ↗
21. 10.1021/acs.nanolett.5b0024010.1021/acs.nanolett.5b00240 ↗
22. 10.1021/acs.nanolett.5b0198710.1021/acs.nanolett.5b01987 ↗
23. 10.1021/nn400576v10.1021/nn400576v ↗
24. 10.1021/ja501715610.1021/ja5017156 ↗
25. 10.1002/chem.20150311010.1002/chem.201503110 ↗
26. 10.1016/j.matlet.2014.01.05210.1016/j.matlet.2014.01.052 ↗
27. 10.1021/nn501624210.1021/nn5016242 ↗
28. 10.1103/PhysRevLett.108.23550210.1103/PhysRevLett.108.235502 ↗
29. 10.1002/elan.114005040910.1002/elan.1140050409 ↗
30. 10.1021/ac971298n10.1021/ac971298n ↗