DataVXSmallPaper
journal article·2022-04

Atomic‐Scale Mechanism of Spontaneous Polarity Inversion in AlN on Nonpolar Sapphire Substrate Grown by MOCVD (Small 16/2022)

Zhiqiang Liu, Bingyao Liu, Fang Ren, Yue Yin, Shuo Zhang, Meng Liang, Zhipeng Dou, Zhetong Liu, Shenyuan Yang, Jianchang Yan, Tongbo Wei, Xiaoyan Yi, Chaoxing Wu, Tailiang Guo, Junxi Wang, Yong Zhang, Jinmin Li, Peng Gao

Small· Volume 18· Issue 16
Publisher page
Source abstract

Abstract

Spontaneous Lattice Inversion In article number 2200057, Zhiqiang Liu, Shenyuan Yang, Yong Zhang, Peng Gao, and co-workers confirm the polarity of AlN on sapphire prepared by metal–organic chemical vapor deposition is not inherited from the nitrides/sapphire interface as widely accepted, instead, experiences a spontaneous polarity inversion. Furthermore, a vertical 2D electron gas is revealed at the polarity inversion interface. This work identifies a new origin of high-density defects in nitride epilayers. It also points to a direction for polarity manipulation and hetero-polarity device design.
Source: openalex_inverted_index · Quality: baseline

Research context

Materials processing

OpenAlex topics: GaN-based semiconductor devices and materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Research and Development Center for Semiconductor Lighting Technology Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China

Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China

Electron Microscopy Laboratory and International Center for Quantum Materials School of Physics Peking University Beijing 100871 China

Beijing Graphene Institute (BGI) Beijing 100095 China

Academy for Advanced Interdisciplinary Studies Peking University Beijing 100871 China

State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China

College of Physics and Information Engineering Fuzhou University Fuzhou Fujian 350108 China

Department of Electrical and Computer Engineering The University of North Carolina at Charlotte Charlotte NC 28223 USA

Collaborative Innovation Center of Quantum Matter Beijing 100871 China

Interdisciplinary Institute of Light‐Element Quantum Materials and Research Center for Light‐Element Advanced Materials Peking University Beijing 100871 China

References

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